Reducing human reliance on high-electricity-consuming cooling technologies like air conditioning is crucial for reshaping the global energy paradigm. Through utilizing natural starch gelatinization, freeze-drying and densification processes, we fabricated an ultrawhite cooling starch film with an ultrahigh solar reflectance of 0.96 and strong infrared emittance of 0.94. The porous structure of the cooling starch film, systematically controlled by the mechanical pressing processing, allows for effective scattering of solar radiation while emitting strongly during the atmospheric transparency window, thereby contributing to high-efficiency daytime radiative cooling capacity. Furthermore, the cooling starch film exhibits excellent mechanical tensile strength, measuring at up to 38.5 megapascals, which is more than twice the strength of natural wood. The ultrawhite radiative cooling starch film holds significant promise for optimizing cooling energy usage, especially in hot and arid climates.

Phase-change materials (PCMs) play a pivotal role in the development of advanced thermal devices due to their reversible phase transitions, which drastically modify their thermal and optical properties. In this study, we present an effective dynamic thermal transistor with an asymmetric design that employs distinct PCMs, vanadium dioxide (VO2), and germanium antimony telluride (GST), on either side of the gate terminal, which is the center of the control unit of the near-field thermal transistor. This asymmetry introduces unique thermal modulation capabilities, taking control of thermal radiation in the near-field regime. VO2 transitions from an insulating to a metallic state, while GST undergoes a reversible switch between amorphous and crystalline phases, each inducing substantial changes in thermal transport properties. By strategically combining these materials, the transistor exhibits enhanced functionality, dynamically switching between states of absorbing and releasing heat by tuning the temperature of gate. This gate terminal not only enables active and efficient thermal management but also provides effective opportunities for manipulating heat flow in radiative thermal circuits. Our findings highlight the potential of such asymmetrically structured thermal transistors in advancing applications across microelectronics, high-speed data processing, and sustainable energy systems, where precise and responsive thermal control is critical for performance and efficiency.

Near-field radiative heat transfer (RHT) can surpass Planck's blackbody limit by several orders of magnitude due to the tunneling effect of thermal photons. The ability to understand and regulate RHT is of great significance in contactless energy transfer. In this work, we construct a rotating system with a hexagonal boron nitride (h-BN) cylinder for actively regulating the RHT between two nanoparticles (NPs). The results show that when the two NPs are located directly above the cylinder, energy can be directionally transmitted along the cylindrical channel in the form of low-loss surface waves, which can significantly enhance RHT. In addition, we find that the RHT can be regulated by actively manipulating the excitation of cylindrical surface modes. When the rotation point is located in the middle of the line connecting the two NPs, the modulation contrast approaches five orders of magnitude, higher than that of cylinders made of other materials under the same conditions. When its diameter is slightly less than the distance between NPs, the h-BN cylinder shows excellent tunability in the heat exchange. The present work may offer a theoretical possibility for actively regulating and controlling near-field RHT between arbitrary objects based on cylindrical waveguides.

The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide (NiOx) is accompanied by Au diffusion down to the GaN surface, and by Ga out-diffusion through the GaN/metal interface. Electrical characterizations of the contact by Transmission Line Method (TLM) show that an ohmic contact is obtained as soon as a thin, Au-Ga interfacial layer is formed, even after complete diffusion of Ni or NiOx to the top surface of the contact. Our results clarify that the presence of Ni or NiOx at the interface is not the main origin of the ohmic-like behavior in such contacts. Auto-cleaning of the interface during the interdiffusion process may play a role, but TEM-EDX analysis evidences that the creation of Ga vacancies associated to the formation of a Ga-Au interfacial layer is crucial for reducing the Schottky barrier height, and maximizing the amount of current flowing through the contact.