Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this letter, we demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers, revealing a transition from the optically active singly negatively charged state to the optically inactive doubly negatively charged state when sandwiched between graphene electrodes. Notably, there is a photoluminescence quenching of a few percent upon the application of a bias voltage between the electrodes. Our findings emphasize the critical importance of considering the charge state of optically active defects in 2D materials, while also showing that the negatively charged boron vacancy remains robust against external perpendicular electric fields. This stability makes it a promising candidate for integration into various van der Waals heterostructures.

We investigate the effect of confinement on the magnetic state of a 12−n⁢m-thick Fe₅GeTe₂ layer grown by molecular beam epitaxy. We use quantitative scanning nitrogen-vacancy magnetometry to locally extract the magnetization in rectangular uniformly in-plane magnetized microstructures, showing no enhancement of the Curie temperature compared to magnetization measurements performed before patterning the film, in contrast to previous results obtained on thick Fe₃GeTe₂ flakes. Under the application of a weak out-of-plane magnetic field, we observe the stabilization of magnetic vortices at room temperature in micrometric squares. Finally, we highlight the effect of the size of the patterned microdisks and microsquares on the stabilization of the vortices using experiments and micromagnetic simulations. Our work thus proposes and demonstrates a way to stabilize noncollinear textures at room temperature in a van der Waals magnet using confinement.

Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the development of novel materials. Whatever the research perspective, the identification of defects is a key, but complicated, and often long-standing issue. Here, we present a general methodology to identify point defects by combining isotope substitution and polytype control, with a systematic comparison between experiments and first-principles calculations. We apply this methodology to hexagonal boron nitride ( h -BN) and its ubiquitous color center emitting in the ultraviolet spectral range. From isotopic purification of the host h -BN matrix, a local vibrational mode of the defect is uncovered, and isotope-selective carbon doping proves that this mode belongs to a carbon-based center. Then, by varying the stacking sequence of the host h -BN matrix, we unveil different optical responses to hydrostatic pressure for the nonequivalent configurations of this ultraviolet color center. We conclude that this defect is a carbon dimer in the honeycomb lattice of h -BN. Our results show that tuning the stacking sequence in different polytypes of a given crystal provides unique fingerprints contributing to the identification of defects in 2D materials.

Interfacial Dzyaloshinkii-Moriya interaction (DMI) is a key ingredient in the stabilization of chiral magnetic states in thin films. Its sign and strength often determine crucial properties of magnetic objects, like their topology or how they can be manipulated with currents. A few experimental techniques are currently available to measure DMI quantitatively, based on the study of domain walls, spin waves, or spin-orbit torques. In this work, we propose a qualitative variant of spin wave methods. We rely on magnetic noise from confined thermal spin waves in domain walls and skyrmions in perpendicularly magnetized thin films, which we probe with scanning NV center relaxometry. We show both numerically and experimentally that the sign of the DMI can be inferred from the amplitude of the detected noise, which is affected by the non-reciprocity in the spin wave dispersion. Furthermore, we also demonstrate that the noise distribution around the contour of magnetic skyrmions reveals their Néel/Bloch nature, giving therefore also insight into the strength of DMI involved in their stabilization.

Pressure is a powerful tool for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measurements under high pressure still remain elusive for this important class of emerging materials. Here we demonstrate magnetic imaging of a van der Waals magnet under high pressure with sub-micron spatial resolution, using a two-dimensional (2D) quantum sensing platform based on boron-vacancy () centers in hexagonal boron nitride (hBN). We first analyze the performances of centers in hBN for magnetic imaging under pressures up to few GPa, and we then use this 2D sensing platform to investigate the pressure-dependent magnetization in micrometer-sized flakes of 1T-CrTe2. Besides providing a new path for studying pressure-induced phase transitions in van der Waals magnets, this work also opens up interesting perspectives for exploring the physics of 2D superconductors under pressure via local measurements of the Meissner effect.

The stacking sequence of two-dimensional hexagonal boron nitride (hBN) is a critical factor that determines its polytypes and its distinct physical properties. Although most hBN layers adopt the thermodynamically stable AA′ stacking sequence, achieving alternative stacking configurations has remained a long-standing challenge. Here we demonstrate the scalable synthesis of hBN featuring unprecedented AA stacking, where atomic monolayers align along the c axis without any translation or rotation. This previously considered thermodynamically unfavourable hBN polytype is achieved through epitaxial growth on a two-inch single-crystalline gallium nitride wafer, using a metal–organic chemical vapour deposition technique. Comprehensive structural and optical characterizations, complemented by theoretical modelling, evidence the formation of AA-stacked multilayer hBN and reveal that hBN nucleation on the vicinal gallium nitride surface drives the unidirectional alignment of layers. Here electron doping plays a central role in stabilizing the AA stacking configuration. Our findings provide further insights into the scalable synthesis of engineered hBN polytypes, characterized by unique properties such as large optical nonlinearity.