The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/InAs trilayer quantum well structure operating at elevated temperatures. This platform meets key criteria for device integration, including scalability, reproducibility, and tunability via electric field. When the Fermi level is positioned within the energy gap, we observe quantized resistance values independent of device length and in both local and nonlocal measurement configurations, confirming the QSHE. Helical edge transport remains stable up to T = 60 kelvin, with further potential for higher-temperature operation. Our findings establish the InAs/GaInSb system as a promising candidate for integration into next-generation devices harnessing topological functionalities, advancing the development of topological electronics.

It has recently been shown that Terahertz sensors can effectively detect the spin resonances of Dirac fermions in graphene. The associated photovoltaic measurement technique allows for the investigation of the intrinsic spin-orbit coupling in graphene as well as its topological properties from microwave to Terahertz frequencies. In this work, using graphene/MoS₂-based Field-Effect Transistors, we observed a magnetic resonance photovoltage signal in the Gigahertz range that is independent on the gate bias. The dispersion of the associated spin-flip transitions remains intriguingly unaffected by the MoS₂ layer. In parallel, the spin-related signal consistently appears as a drop in photovoltage, regardless of the signal's polarity or origin, whether it is due to plasma wave rectification or thermoelectric effects. This behavior is interpreted as a decrease in the system's spin polarization due to spin-dependent recombination or scattering of photocarriers. Understanding the various photovoltaic signals in highly sensitive Gigahertz/Terahertz sensors paves the way for exploring spin-dependent mechanisms in two-dimensional quantum materials, influenced by proximity effects such as spin-orbit coupling, topology, and magnetism.

In a 2D electron system (2DES) the breaking of the inversion, time‐reversal and bulk crystal‐field symmetries is interlaced with the effects of spin‐orbit coupling (SOC) triggering exotic quantum phenomena. Here, epitaxial engineering is used to design and realize a 2DES characterized simultaneously by ferromagnetic order, large Rashba SOC and hexagonal band warping at the (111) interfaces between LaAlO 3 , EuTiO 3 , and SrTiO 3 insulators. The 2DES displays anomalous quantum corrections to the magneto‐conductance driven by the time‐reversal‐symmetry breaking occurring below the magnetic transition temperature. The results are explained by the emergence of a non‐trivial Berry phase and competing weak anti‐localization/weak localization back‐scattering of Dirac‐like fermions, mimicking the phenomenology of gapped topological insulators. These findings open perspectives for the engineering of novel spin‐polarized functional 2DES holding promises in spin‐orbitronics and topological electronics.

By using the self-consistent Born approximation, we investigate disorder effect induced by shortrange impurities on the band-gap of a seminal two-dimensional (2D) system, whose phase diagram contains trivial, single-band-inverted and double-band-inverted states. Following the density-ofstates (DOS) evolution, we demonstrate multiple closings and openings of the band-gap with the increase of the disorder strength. Calculations of the spectral function describing the quasiparticles at the Γ point of the Brillouin zone evidence that the observed band-gap behavior is unambiguously caused by the topological phase transitions due to the mutual inversions between the first and second electron-like and hole-like subbands. We also find that an increase in the disorder strength in the double-inverted state always leads to the band-gap closing due to the overlap of the tails of DOS from conduction and valence subbands.