Accueil > Production scientifique
(196) Production(s) de BRIOT O.
Optical, structural investigations and band-gap bowing parameter of GaInN alloys Auteur(s): Moret M., Gil B., Ruffenach S., Briot O., Giesen Christoph, Heuken Michael, Rushworth Simon, T. Leese, Succi Marco
Conference: 2nd International Symposium on Growth of III-Nitride (ISGN-2) (Laforet Shuzenji, Izu, JP, 2008-07-06) |
MOVPE growth of InN buffer layers on sapphire Auteur(s): Briot O., Ruffenach S., Moret M., Gil B., Giesen Christoph, Heuken Michael, Rushworth Simon, Leese T., Succi Marco
Conference: 2nd International Symposium on the gGrowth of III-Nitrides (Laforet Shuzenji, Izu, JP, 2008-07-06) |
Alternative precursors for MOVPE growth of InN and GaN at low temperature Auteur(s): Ruffenach S., Moret M., Briot O., Gil B., Giesen Christoph, Heuken Michael, Rushworth Simon, Leese T., Succi Marco
Conference: 2nd International Symposium on the growth of III-NItrides (ISGN-2) (Laforet Shuzenji, Izu, JP, 2008-07-06) |
Structural changes during the natural aging process of InN quantum dots Auteur(s): Gonzalez David, Lozano J.G., Herrera M., Browning N.D., Ruffenach S., Briot O., Garcia R. (Article) Publié: Journal Of Applied Physics, vol. 105 p.013527 (2009) Texte intégral en Openaccess : |
The determination of the bulk residual doping in indium nitride films using photoluminescence Auteur(s): Briot O., Moret M., Ruffenach S., Gil B. (Article) Publié: Applied Physics Letters, vol. 95 p.031910 (2009) |
The Reduction of Elastic Energy Density in InN Growth on (hkl)-Oriented Planes Auteur(s): Briot O., Gil B., Bigenwald Pierre (Article) Publié: Japanese Journal Of Applied Physics, vol. 48 p.051002 (2009) |
The effect of growth temperature on the luminescence and structural properties of GaN : Tm films grown by gas-source MBE Auteur(s): Roqan I. S., Nogales E., O'Donnell K. P., Trager-Cowan C., Martin R. W., Halambalakis G., Briot O. (Article) Publié: Journal Of Crystal Growth, vol. 310 p.4069-4072 (2008) Texte intégral en Openaccess : |