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(196) Production(s) de BRIOT O.
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Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms 
Auteur(s): Demangeot F., Pinquier C., Frandon J., Gaio M., Briot O., Maleyre Benedicte, Ruffenach S., Gil B.
(Article) Publié:
Physical Review B, vol. 71 p.104305 (2005)
Ref HAL: hal-00540408_v1
DOI: 10.1103/PhysRevB.71.104305
WoS: 000228065400035
Exporter : BibTex | endNote
49 Citations
Résumé: We have studied plasmon-longitudinal optical (LO) phonon coupled modes by means of Raman scattering in n-type InN layers grown by metalorganic vapor phase epitaxy, for carrier densities in the range of 10(19) cm(-3). A strong mode is observed near the frequency of the A(1)(LO) phonon, despite the high conductivity of the films. It is suggested that the main origin which can be invoked for an effective decoupling of the LO phonon from the plasmon is the participation to the scattering of phonons with wave vectors larger than the Thomas-Fermi wave vector. The line shape of the LO mode is calculated using the Lindhard-Mermin dielectric function taking into account finite wave-vectors, for various light scattering processes. We find that the charge density fluctuations mechanism is involved as the main scattering mechanism in n-type InN, at least for the investigated excitation energies in the 2.54-1.89 eV range. The breakdown of the wave-vector conservation is assigned to electron elastic scattering by impurities.
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Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition
Auteur(s): Intartaglia R., Maleyre Benedicte, Ruffenach S., Briot O., Taliercio T., Gil B.
(Article) Publié:
Applied Physics Letters, vol. 86 p.142104 (2005)
Ref HAL: hal-00540409_v1
DOI: 10.1063/1.1897428
WoS: 000228242700030
Exporter : BibTex | endNote
34 Citations
Résumé: The 800 meV photoluminescence band in indium nitride is excited under pulsed excitation conditions and is investigated as a function of temperature and time. Our results are consistent with a composite photoluminescence feature composed of two overlapping bands separated by an similar to 10 meV splitting, with populations described by a thermal equilibrium model. Efficient nonradiative recombination channels rule both the temperature dependence of the time-integrated photoluminescence spectra and the recombination dynamics. At 10 K, the radiative recombination time is of the order of 300 ns, while the nonradiative recombination time, which is ruled by activation energy of 8 meV, is about 100 ps. (C) 2005 American Institute of Physics.
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Terahertz investigation of high quality indium nitride epitaxial layers
Auteur(s): Meziani Ym, Maleyre Benedicte, Sadowski Ml, Ruffenach S., Briot O., Knap W.
(Article) Publié:
Physica Status Solidi A, vol. 202 p.590-592 (2005)
Texte intégral en Openaccess : 
Ref HAL: hal-00540412_v1
DOI: 10.1002/pssa.200460434
WoS: 000228522300021
Exporter : BibTex | endNote
8 Citations
Résumé: We report on the optical characterization of InN layers in the THz range and magnetic fields up to 13 T. The results are interpreted using the dielectric function formalism, with contributions of cyclotron resonance, phonons, plasmons and helicon wave excitations. We show how THz radiation transmission measurements can provide an optical contactless method of determining the quality (carrier density and momentum scattering rate) in the InN layers. (c) 2005 WILEY-VCH Verlag GmbH W Co.
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Response to "Comment on 'Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition'" Appl. Phys. Lett. 87, 176101 (2005)
Auteur(s): Intartaglia R., Maleyre Benedicte, Ruffenach S., Briot O., Taliercio T., Gil B.
(Autres publications)
, 2005Texte intégral en Openaccess : 
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Optical investigations on si-doped InN films
Auteur(s): Maleyre Benedicte, Briot O., Ruffenach S., Gil B.
Conference: 7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (Montpellier (FRANCE), FR, 2004-06-01)
Actes de conférence: Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4, vol. 2 p.1379-1383 (2005)
Ref HAL: hal-00540416_v1
Exporter : BibTex | endNote
Résumé: We report a detailed study of the optical properties unintentionally doped and n-doped InN films grown by Metal Organic Vapour Phase Epitaxy. When increasing the doping, a blue-shift of the absorption and reflectance spectra is found that we quantitatively correlate with the doping. Our measurements give us the value of the two-band Kane model parameter: 12 eV and an asymptotic value for the InN band gap at 300 K: 1160 meV. Moss-Burstein shift and band gap renormalization effects are computed as well as a non-parabolic effective mass. This is found to equal 0.09 m, in the unintentionally doped case. The photoluminescence spectra are strongly redshifted with respect to the bandgap and are always peaking near 760 meV. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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