Ref HAL: hal-01932705_v1
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Résumé:

Light emission in polar group-III nitride quantum wells (QWs) optically pumped at densities significantly below the lasing threshold is usually interpreted in terms of excitons. Whereas thin GaN QWs with fast radiative lifetimes are employed in light-emitting devices, the excitons in thick QWs (typ. 7nm) are characterized by a non-zero dipole moment and long radiative lifetimes, due to the built-in electric field. These features result in many interesting properties of dipolar excitons: they can propagate over large distances and thus cool down to the lattice temperature before recombination, offering the possibility for studies of cold and dense gas of interacting bosons. In this context, two important issues must be addressed: the strength of the exciton-exciton interaction, and the excitonic Mott transition, that sets the maximum density of excitons. Combining spatially and time-resolved photoluminescence in different excitation geometries, we provide a set of experimental data showing that the emission linewidth is proportional to the emission energy in a wide range of carrier densities and temperatures. The proportionality coefficient is almost temperature independent. These results are compared to the existing data in various material systems and discussed in terms of the Mott transition and its criteria, exciton-exciton interaction and its possible contribution to the linewidth, as well as the role of disorder in the density-dependent emission spectra.

Ref HAL: hal-01932599_v1
Ref Arxiv: 1712.10312
DOI: 10.1103/PhysRevB.97.165419
WoS: 000430058200006
Ref. & Cit.: NASA ADS
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9 Citations
Résumé:

We discuss neutral and charged complexes (biexciton and trion) formed by indirect excitons in layered quasi-two-dimensional semiconductor heterostructures. Indirect excitons -- long-lived neutral Coulomb-bound pairs of electrons and holes of different layers -- have been known for semiconductor coupled quantum wells and are recently reported for van der Waals heterostructures such as bilayer graphene and transition metal dichalcogenides. Using the configuration space approach, we derive the analytical expressions for the trion and biexciton binding energies as functions of the interlayer distance. The method captures essential kinematics of complex formation to reveal significant binding energies, up to a few tens of meV for typical interlayer distances ~3-5 A, with the trion binding energy always being greater than that of the biexciton. Our results can contribute to the understanding of more complex many-body phenomena such as exciton Bose-Einstein condensation and Wigner-like electron-hole crystallization in layered semiconductor heterostructures.

Commentaires: 10 pages, 4 figures, 105 references. arXiv admin note: text overlap with arXiv:1605.02348. Réf Journal: Phys. Rev. B 97, 165419 (2018)

Résumé:

Semiconductor coupled quantum wells (CQWs) offer an excellent laboratory for studying both intra-well direct excitons (DX) and inter-well indirect excitons (IX), as well as their interactions and spin dynamics. The presentation will focus on the pump-probe spectroscopy, a powerful tool of nonlinear optics, that we have applied to biased CQW. We will show how DX and IX spin and population dynamics, as well as the spin polarization of residual electrons may be detected via the modulation of reflectivity and Kerr rotation spectra. In particular, the origin of the nonlinearities related to the low oscillator strength IXs will be addressed. Spin relaxation and decoherence mechanisms for DX, IX and electron gas will be presented. Results on IXs created via magnetic Stark effect and the resulting spin dynamics in unbiased quantum wells will be discussed

Ref HAL: hal-01908565_v1
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Ref HAL: hal-01907860_v1
Exporter : BibTex | endNote
Résumé:

Light emission in polar group-III nitride quantum wells (QWs) optically pumped at densities significantly below the lasing threshold is usually interpreted in terms of excitons. Whereas thin GaN QWs with fast radiative lifetimes are employed in light-emitting devices, the excitons in thick QWs (typ. 7nm) are characterized by a non-zero dipole moment and long radiative lifetimes, due to the built-in electric field. These features result in many interesting properties of dipolar excitons: they can propagate over large distances and thus cool down to the lattice temperature before recombination, offering the possibility for studies of cold and dense gas of interacting bosons. In this context, two important issues must be addressed: the strength of the exciton-exciton interaction, and the excitonic Mott transition, that sets the maximum density of excitons. Combining spatially and time-resolved photoluminescence in different excitation geometries, we provide a set of experimental data showing that the emission linewidth is proportional to the emission energy in a wide range of carrier densities and temperatures. The proportionality coefficient is almost temperature independent. These results are compared to the existing data in various material systems and discussed in terms of the Mott transition and its criteria, exciton-exciton interaction and its possible contribution to the linewidth, as well as the role of disorder in the density-dependent emission spectra.

Ref HAL: hal-01629354_v1
Ref Arxiv: 1706.02528
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé:

We develop a method of non-perturbative optical control over adiabatic remagnetisation of the nuclear spin system and apply it to verify the spin temperature concept in GaAs microcavities. The nuclear spin system is shown to exactly follow the predictions of the spin-temperature theory, despite the quadrupole interaction that was earlier reported to disrupt nuclear spin thermalisation. These findings open a way to deep cooling of nuclear spins in semiconductor structures, with a prospect of realisation of nuclear spin-ordered statesfor high fidelity spin-photon interfaces.

Commentaires: 7 pages, 4 figures

Ref HAL: hal-01621240_v1
DOI: 10.1103/PhysRevB.96.165304
WoS: WOS:000412747900006
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1 Citation
Résumé:

We demonstrate theoretically that the presence of holes, either resident or photocreated, in diluted magnetic quantum wells accelerates the spin relaxation of electrons via a mechanismwhich has been previously overlooked. This effect is due to the spin correlations, which establish between magnetic ions coupled via hole-mediated Ruderman-Kittel-Kasuya-Yoshida interactions in the paramagnetic phase. As a consequence, the electron spin relaxation becomes temperature and hole density dependent, in contrast to existing theories. Our theory qualitatively reproduces the increase of the electron spin relaxation rate with pump power observed in n-doped CdMnTe magnetic quantum wells [Ben Cheikh et al., Phys. Rev. B 88, 201306 (2013)]. It also predicts a decrease of the spin relaxation rate with temperature, as observed, although not in the same temperature range.