Ref HAL: hal-02272702_v1
Ref Arxiv: 1902.02974
DOI: 10.1021/acs.nanolett.9b00914
WoS: 000481563800013
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Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.

Ref HAL: hal-02466829_v1
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Cooling of nuclear spins in doped semiconductors via their dynamic polarization by optical pumping is a powerful method for harnessing ubiquitous fluctuations of nuclear spin, which constitute a well-known decoherence channel for the electronic spins. The idea of spin cooling is based on the hypothesis of spin temperature, which states that nuclear spin system (NSS) reaches an internal thermal equilibrium long before it comes to equilibrium with the external bath (crystal lattice). Although thermodynamic framework has been successfully employed for the description of a variety of the experimental data, a rigorous check of this concept in semiconductors was impossible until recently, in particular at low magnetic field. The reason for that is the lack of experimental techniques allowing nonperturbative optical control over adiabatic transformation of the NSS.We have recently developed such methods, based on off-resonant Faraday rotation and spin noise spectroscopy [1, 2]. Using these techniques, combined with dark-interval photoluminescence spectroscopy, we established a comprehensive picture of the nuclear spin relaxation efficiency, its magnetic field, temperature, and carrier concentration dependence in doped GaAs, a model system in the field of nuclear spin physics in semiconductors [3-5]. We also analyzed the interplay between four relevant relaxation mechanisms: hyperfine interaction, quadrupole interaction, spin diffusion and Korringa mechanisms.Understanding of field dependence of NSS dynamics allowed us to obtain a new insight into the NSS thermodynamics, and verify the spin temperature concept in GaAs bulk material and microcavities [6]. We have demonstrated, that NSS exactly follows the predictions of the spin temperature theory, despite the quadrupole interaction that was earlier reported to disrupt nuclear spin thermalization in quantum dots [7]. Our results open a way for the deep cooling of nuclear spins in semiconductor structures, with the prospect of realizing nuclear spin-ordered states for high-fidelity spin-photon interfaces.This work is supported by a joint grant of the Russian Foundation for Basic Research (RFBR, Grant No. 16-52-041301-4 and National Center for Scientific Research (CNRS, PRC SPINCOOL No. 148362)References:[1] R. Giri et al, Physical Review Letters, 111, 087603 (2013)[2] I. I. Ryzhov et al, Applied Physics Letters, 106, 242405 (2015)[3] M. Kotur et al, Physical Review B, 94(8), 081201 (2016)[4] M. Vladimirova et al, Physical Review B, 95, 125312 (2017)[5] M. Kotur et al, eprint arXiv:1802.05013 (2018)[6] M. Vladimirova et al, Physical Review B, 97, 041301 (2018)[7] P. Maletinsky et al, Nature Physics, 5, 407 (2009)

Résumé:

Excitons in nitride quantum wells (QWs) are naturally indirect due to the strong internal electric field: electron and hole within such excitons are spatially separated, leading to strong dipole moments and long radiative lifetimes. The physics of indirect excitons (IXs) has been extensively studied in GaAs-based heterostructures: they can propagate over large distances, be trapped in gate-controlled electrostatic traps, and form a cold and dense gas of interacting bosons. Compared to traditional IXs in arsenide heterostructures, IXs in GaN QWs have much larger binding energies and smaller Bohr radii. This allows exploring IX propagation up to room temperature, and over a much larger density range. The length scale of the excitonic transport is an important figure of merit of the indirect excitons. The excitonic transport was first observed at low temperature in the case of hetero-epitaxy of the GaN QWs on sapphire substrates [1]. The improvement of the sample quality through homo-epitaxy on GaN substrates allowed observing an efficient transport up to room temperature [2]. Under a focused non-resonant excitation of the quantum well, we observe a spatial decay of the exciton density (deduced from the local blue shift of the QW transition), with a length scale of 100µm at 10K and 30µm at T=300K in our most recent homo-epitaxial samples. Such long propagation distances are a pre-requisite to the development of IX-based optoelectronic devices operating on a large temperature range, and to the exploration of exciton collective states. The realization of an excitonic trap is a first step forward, and we recently investigated the exciton transport in electrostatic traps formed when a semi-transparent gate is deposited on top of the QW sample (figure 1). Trapping of the excitons is observed, with a typical trap depth of 60-90 meV. The excitons can also be generated outside the trap and relax into the trap, so to spatially separate the trap from the generation spot, which is expected to be a source of heat and decoherence for the excitonic cloud. These results are promising for the investigation of trapped collective states of IXs, and their cooling into exotic phases.

Ref HAL: hal-01932745_v1
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Résumé:

Cooling of nuclear spin system (NSS) in doped semiconductors via dynamic polarization by optical pumping is a powerful method for harnessing ubiquitous fluctuations of nuclear spin. The idea of NSS cooling is based on the hypothesis of spin temperature, which states that NSS reaches an internal thermal equilibrium long before it comes to equilibrium with the external bath (crystal lattice). Although thermodynamic framework has been successfully employed for the description of a variety of the experimental data, a rigorous check of this concept in semiconductors was impossible until recently, in particular at low magnetic field. The reason for that is the lack of experimental techniques allowing nonperturbative optical control over adiabatic transformation of the NSS. We have recently developed such methods, based on off-resonant Faraday rotation and spin noise spectroscopy [1,2]. Using these techniques, combined with photoluminescence spectroscopy, we established a comprehensive picture of the nuclear spin relaxation efficiency, its magnetic field, temperature, and carrier concentration dependence in both n- and p-doped GaAs, a model system in the field of nuclear spin physics in semiconductors [3-5]. We also analyzed the interplay between four relevant relaxation mechanisms: hyperfine interaction, quadrupole interaction, spin diffusion towards paramagnetic impurities, and Korringa mechanisms. Figure 1 illustrates these processes in a nuclei-electron coupled system. Understanding of field dependence of NSS dynamics allowed us to obtain a new insight into the NSS thermodynamics, and verify the spin temperature concept in GaAs bulk material and microcavities [6]. We have demonstrated that NSS exactly follows the predictions of the spin temperature theory, despite the quadrupole interaction that was earlier reported to disrupt nuclear spin thermalization in quantum dots [7]. These results open a way for the deep cooling of nuclear spins in semiconductor structures, with the prospect of realizing nuclear spin-ordered states for high-fidelity spin-photon interfaces. References[1] R. Giri et al, Physical Review Letters, 111, 087603 (2013)[2] I. I. Ryzhov et al, Applied Physics Letters, 106, 242405 (2015)[3] M. Kotur et al, Physical Review B, 94, 081201(R) (2016)[4] M. Vladimirova et al, Physical Review B, 95, 125312 (2017)[5] M. Kotur et al, Physical Review B, 97, 165206 (2018)[6] M. Vladimirova et al, Physical Review B, 97, 041301 (2018)[7] P. Maletinsky et al, Nature Physics, 5, 407 (2009)

Ref HAL: hal-01910225_v1
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Excitons in wide nitride Quantum Wells (QWs) are naturally indirect due to the strong internal electric field: within such excitons the electron and the hole are spatially separated, resulting in strong dipole moments and long radiative lifetimes. These properties offer the possibility to explore the collective exitonic phases with complex phase diagrams predicted theoretically in the temperature-density-dipole moment parameter space. Here we study 8 nm-wide GaN/(AlGa)N QWs presenting 1MV/cm built-in electric field in the growth direction, microsecond-long radiative lifetimes, 8 meV exciton emission linewidth and 100 µm transport lengths at cryogenic temperatures. To address the quasi-equilibrium properties of the strongly dipolar excitons (i.e. whose electric dipoles are twice as long as their Bohr radii d = 2aB), we confine them in the QW’s plane using electrostatic traps with a semi-transparent Schottly electrode. These traps consist in semitransparent electrodes deposited on the sample’s surface. We make micro-photoluminescence (µPL) measurements (less than 1µm- resolution) upon point-like optical excitation. We thus obtain the spectrally resolved information on the emission of the excitons as a function of power and density. Our experiments demonstrate an efficient trapping of excitons in the plane of the QW, with a trapping potential of an order of 50 meV. We demonstrate that it is possible to uniformly fill areas up to hundreds of microns in length with excitons and/or electron hole pairs in the QW’s plane. At T=4K, the emission from these areas exhibits a peculiar behavior. At low densities, such that there is no measurable screening of the built-in electric field, the emission from the trap is weak and spatially homogeneous. However, for weak built-in electric field screenings (as low as 10 meV, ~1011 cm-2 pair density), the PL brightens up and becomes spatially inhomogeneous – droplet like. We tentatively interpret this fragmentation as the coexistence of the gas and liquid phases of the excitons. As expected, the fragmented character of the emission disappears when either power and/or temperature is further increased, due to either exciton heating (gas phase), ionization or dissociation (Mott transition). Our results suggest that excitons in GaN QWs are promising candidates for the study of collective phenomena in cold dipolar bosonic systems. The advantages of the nitrides over arsenides include both higher critical temperatures for the onset of collective phenomena, and the ability to increase the dipolarity of systems based on their small exciton Bohr radius.

Ref HAL: hal-01909352_v1
DOI: 10.1016/j.spmi.2018.06.015
WoS: 000446152200073
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2 Citations
Résumé:

Density and spin dynamics of indirect excitons in asymmetric GaAs/AlGaAs coupled quantum wells is studied by time-resolved photoluminescence. Under electric bias applied in the growth direction the lifetime of indirect excitons formed by an electron in a wide and hole in a narrow quantum well reaches 12 ns, while the circular polarisation lifetime is about 5 ns. The structure is suited for further studies of dark indirect excitons by time-resolved pump-probe spectroscopy

Ref HAL: hal-01908823_v1
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Résumé:

Excitons in nitride quantum wells (QWs) are naturally indirect due to the strong internal electric field: electron and hole within such excitons are spatially separated, leading to strong dipole moments and long radiative lifetimes. The physics of indirect excitons (IXs) has been extensively studied in GaAs-based heterostructures: they can propagate over large distances, be trapped in gate-controlled electrostatic traps, and form a cold and dense gas of interacting bosons. Compared to traditional IXs in arsenide heterostructures, IXs in GaN QWs have much larger binding energies and smaller Bohr radii. This allows exploring IX propagation up to room temperature, and over a much larger density range. The length scale of the excitonic transport is an important figure of merit of the indirect excitons. The excitonic transport was first observed at low temperature in the case of hetero-epitaxy of the GaN QWs on sapphire substrates [1]. The improvement of the sample quality through homo-epitaxy on GaN substrates allowed observing an efficient transport up to room temperature [2]. Under a focused non-resonant excitation of the quantum well, we observe a spatial decay of the exciton density (deduced from the local blue shift of the QW transition), with a length scale of 100µm at 10K and 30µm at T=300K in our most recent homo-epitaxial samples. Such long propagation distances are a pre-requisite to the development of IX-based optoelectronic devices operating on a large temperature range, and to the exploration of exciton collective states. The realization of an excitonic trap is a first step forward, and we recently investigated the exciton transport in electrostatic traps formed when a semi-transparent gate is deposited on top of the QW sample. Trapping of the excitons is observed, with a typical trap depth of 60-90 meV. The excitons can also be generated outside the trap and relax into the trap, so to spatially separate the trap from the generation spot, which is expected to be a source of heat and decoherence for the excitonic cloud. These results are promising for the investigation of trapped collective states of IXs, and their cooling into exotic phases.