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(89) Production(s) de VALVIN P.
Hybrid π-conjugated organosilica materials: semiconductors for fully covalent transistors or photovoltaic applications Auteur(s): Roche Gilles, Gorisse Thérèse, Thuau Damien, Valvin P., Tjoutis Thomas, Chambon Sylvain, Flot David, Moreau Joël, Dautel Olivier, Wantz Guillaume
Conference: SPIC 2017 (Limoges, FR, 2017-10-16) |
Isotope engineering of van der Waals interactions in hexagonal boron nitride Auteur(s): Vuong P., Liu S., van Der Lee A., Cusco R., Artus L., Michel T., Valvin P., Edgar J. H., Cassabois G., Gil B. (Article) Publié: Nature Materials, vol. 17 p.152 (2017) Texte intégral en Openaccess : |
Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells. Auteur(s): Vladimirova M., Guillet T., Jouault B., Brimont C., Scalbert D., Valvin P., Bretagnon T., Lefebvre P., Lahourcade Lise, Grandjean Nicolas, Damilano Benjamin
Conference: International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18. (Würtzburg, DE, 2017-07-09) |
On the nature of light emission in polar GaN/(AlGa)N quantum wells. Auteur(s): Brimont C., Guillet T., Scalbert D., Jouault B., Valvin P., Bretagnon T., Lefebvre P., Lahourcade Lise, Grandjean Nicolas, Damilano B., Vladimirova M. (Affiches/Poster) 12th International Conference on Nitride Semiconductors – ICNS12. (Strasbourg, FR), 2017-07-24 |
π-Conjugated Organosilica Semiconductors: Toward Robust Organic Electronics Auteur(s): Roche Gilles, Thuau Damien, Valvin P., Clevers Simon, Tjoutis Thomas, Chambon Sylvain, Flot David, Geerts Yves H., Moreau Joël J. E., Wantz Guillaume, Dautel Olivier J. (Article) Publié: Advanced Electronic Materials, vol. 3 p.1700218 (2017) Texte intégral en Openaccess : |
Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures Auteur(s): Ngo T. H., Gil B., Damilano Benjamin, Valvin P., Courville A, Demierry P (Article) Publié: Journal Of Applied Physics, vol. 122 p.063103 (2017) |
Exciton-phonon interaction in the strong-coupling regime in hexagonal boron nitride Auteur(s): Vuong P., Cassabois G., Valvin P., Liu Song, Edgar Jim, Gil B. (Article) Publié: Physical Review B, vol. 95 p.201202(R) (2017) Texte intégral en Openaccess : |