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(219) Production(s) de COQUILLAT D.
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THz imaging with low-cost 130 nm CMOS transistors  Auteur(s): Schuster Franz, Sakowicz Maciej, Siligaris Alexandre, Dussopt Laurent, Videlier H., Coquillat D., Teppe F., Giffard Benoît, Dobroiu Adrien, Skotnicki Thomas, Knap W.
Conference: SPIE2010-Security and Defence SD108 Millimetre Wave and Terahertz Sensors and Technology (Toulouse, FR, 2010-09-20) |
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Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors Auteur(s): Diakonova N., El Fatimy A., Meziani Y., Otsuji T., Coquillat D., Knap W., Teppe F., Vandenbrouk S., Madjour K., Theron D., Gaquiere C., Poisson M. A., Delage S.
Conference: 35th International Conference on Infrared, Millimeter and Terahertz Waves (Rome, IT, 2010-09-05) |
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Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors Auteur(s): Boubanga-Tombet S., Teppe F., Torres J., El Moutaouakil A., Coquillat D., Diakonova N., Consejo C., Arcade P., Nouvel P., Marinchio H., Laurent T., Palermo C., Penarier A., Otsuji T., Varani L., Knap W. (Article) Publié: Applied Physics Letters, vol. 97 p.262108 (2010) |
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Measurements of THz emission from nanometric-size transistors Auteur(s): Nouvel P., Torres J., Marinchio H., Laurent T., Blin S., Chusseau L., Palermo C., Varani L., Shiktorov P., Starikov E., Gruzhinskis V., Teppe F., Coquillat D.
Conference: 35th International Conference on Infrared, Millimeter and Terahertz Waves (Rome, IT, 2010-09-05) |
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Imaging above 1 THz Limit with Si-MOSFET Detectors Auteur(s): Schuster F., Videlier H., Sakowicz M., Teppe F., Coquillat D., Dupont B., Siligaris A., Dussopt L., Giffard B., Knap W.
Conference: 35th International Conference on Infrared, Millimeter and Terahertz Waves (Rome, IT, 2010-09-05) |
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Room Temperature Imaging above one Terahertz by Field Effect Transistor as Detector Auteur(s): Nadar S., Coquillat D., Sakowicz M., Videlier H., Klimenko O., Teppe F., Diakonova N., Knap W., Seliuta D., Kasalynas I., Valusis G.
Conference: 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) (Rome (ITALY), FR, 2010-09-05) |
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Field effect transistors for terahertz detection - silicon versus III-V material issue Auteur(s): Knap W., Videlier H., Nadar S., Coquillat D., Diakonova N., Teppe F., Bialek M., Grynberg M., Karpierz K., Lusakowski J., Nogajewski K., Seliuta D., Kašalynas I., Valušis G.
(Article) Publié:
Opto-Electronics Review, vol. 18 p.225-230 (2010)
Texte intégral en Openaccess : |
