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Optical properties of an ensemble of G-centers in silicon 
Auteur(s): Beaufils C., Redjem W., Rousseau E., Jacques V., Kuznetsov A. Yu., Raynaud C., Voisin C., Benali A., Herzig T., Pezzagna S., Meijer J., Abbarchi Marco, Cassabois G.
(Article) Publié:
Physical Review B, vol. 97 p.035303 (2018)
Texte intégral en Openaccess : 
Ref HAL: hal-01698220_v1
Ref Arxiv: 1708.05238
DOI: 10.1103/PhysRevB.97.035303
WoS: WOS:000419615100007
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
15 Citations
Résumé: We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform.
Commentaires: . Réf Journal: Phys. Rev. B 97, 035303 (2018)
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