The rise of efficient extraction techniques triggered a renewal of interest in semiconducting carbon nanotube (s-SWNT) research. It represents a great interest for optoelectronics, with outstanding properties in field-effect transistor, and s-SWNT ability to efficiently emit light in the near-IR range. In particular, the hybrid system polyfluorene (PFO) wrapped s‑SWNT (s-SWNT@PFO) display strong photoluminescence, and could be coupled with photonic devices such as microring resonators to control photoluminescence linewidth and enhance photoluminescence intensity.The main challenge for using s-SWNT@PFO in optoelectronics lies in the difficulty to establish good electrical contact with a PFO embedded carbon nanotube, and existing studies only focused on optical pumping of carbon nanotube networks, without addressing issues of electrical driving.We propose to investigate these issues using suspended s-SWNT@PFO networks. The network formation process allow to control nanotube density, while the amount of remaining metallic nanotube in the network could be adjusted at the extraction phase. A selective annealing process under low pressure is used to tune PFO wrapping around the nanotubes. The resulting s-SWNT@PFO networks are then probed by AFM, Raman spectroscopy, absorption, photoluminescence and electrical experiments.

Chemical vapor deposition has proved to be successful in producing graphene samples on silicon carbide (SiC) homogeneous at the centimeter scale in terms of Hall conductance quantization. Here, we report on the realization of co-planar diffusive Al/ monolayer graphene/ Al junctions on the same graphene sheet, with separations between the electrodes down to 200 nm. Robust Josephson coupling has been measured for separations not larger than 300 nm. Transport properties are reproducible on different junctions and indicate that graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices.

We examine the excitonic nature of the E33 optical transition of the individual free-standing index-identified(23,7) single-walled carbon nanotube by means of the measurements of its radial-breathing-mode and G-modeRaman excitation profiles. We confirm that it is impossible to determine unambiguously the nature of its E33optical transition (excitonic vs band to band) based only on the excitation profiles. Nevertheless, by combiningRaman scattering, Rayleigh scattering, and optical absorption measurements on strictly the same individual(23,7) single-walled carbon nanotube, we show that the absorption, Rayleigh spectra, and Raman excitationprofiles of the longitudinal and transverse G modes are best fitted by considering the nature of the E33 transitionas excitonic. The fit of the three sets of data gives close values of the transition energy E33 and damping parameter. This comparison shows that the fit of the Raman excitation profiles provides with good accuracy the energy and damping parameter of the excitonic optical transitions in single-walled carbon nanotubes.

The rise of efficient extraction techniques triggered a renewal of interest in semiconducting carbon nanotubes (s-SWNT) research. It represents a great interest for optoelectronics, with outstanding properties in field-effect transistor, and s-SWNT ability to efficiently emit light in the near-IR range. In particular, polyfluorene (PFO) wrapped s‑SWNT (s-SWNT@PFO) display strong photoluminescence, and could be coupled with photonic devices such as microring resonators [1,2] to control photoluminescence linewidth and enhance photoluminescence intensity. The main challenge for using s-SWNT@PFO in optoelectronics lies in the difficulty to establish good electrical contact with a PFO embedded carbon nanotube, and existing studies only focused on optical pumping of carbon nanotubes networks, without addressing issues of electrical driving. We propose to investigate these issues using s-SWNT@PFO networks deposited on patterned substrate (Figure). The network formation process allow to control nanotube density, while the amount of remaining metallic nanotube in the network could be adjusted at the extraction phase. A selective annealing process under low pressure is used to tune PFO wrapping around the nanotubes. The resulting s-SWNT@PFO networks are then probed by AFM, Raman spectroscopy, absorption, photoluminescence and electrical experiments.

Counting number of graphene layers on copper ? (OK for SiO2/Si, SiC, glass)Graphene source in Montpellier by CVD on copper and on SiC and by SiC sublimation (development of prototype furnace)

Raman spectroscopy (RS) of graphene-related materials (GRM) is being considered as a fast, versatile, powerful and non-destructive characterization technique. Indeed, RS is sensitive to the number of layers, their stacking order, the nature and density of defects, the charge carrier density and in-plane strain variations. However, the positions, linewidths, profiles, intensities of the graphene/MLG Raman bands are not only affected by all these perturbations but also depends on the uniformity across the probed area (laser spot size and field depth) and on the substrate (through optical interference effects, dielectric screening…). An accurate interpretation of Raman spectra becomes then extremely complex and deserves the combined use of complementary diagnosis. We recently developed a unique expertise in terms graphene/MLG characterization. This know-how is based on instrumental developments (including laser power, transmission, reflection and Raman signal simultaneous monitoring), as well as the development of data treatment (including specific algorithms to subtract the substrate Raman background), interpretation tools and a detailed modeling of the Raman scattering and optical properties of graphene/MLG on a wide set of substrates (including SiC, Cu, SiO2/Si,…). Special care was paid to define protocols that ensure a high reproducibility and repeatability of calibrated measurements. In this contribution, we apply this tool for counting the number of layers of any kind of graphene samples. We define and validate standard procedures for GRM characterization on different substrates.