The rise of efficient extraction techniques triggered a renewal of interest in semiconducting carbon nanotube (s-SWNT) research. It represents a great interest for optoelectronics, with outstanding properties in field-effect transistor, and s-SWNT ability to efficiently emit light in the near-IR range. In particular, the hybrid system polyfluorene (PFO) wrapped s‑SWNT (s-SWNT@PFO) display strong photoluminescence, and could be coupled with photonic devices such as microring resonators to control photoluminescence linewidth and enhance photoluminescence intensity.The main challenge for using s-SWNT@PFO in optoelectronics lies in the difficulty to establish good electrical contact with a PFO embedded carbon nanotube, and existing studies only focused on optical pumping of carbon nanotube networks, without addressing issues of electrical driving.We propose to investigate these issues using suspended s-SWNT@PFO networks. The network formation process allow to control nanotube density, while the amount of remaining metallic nanotube in the network could be adjusted at the extraction phase. A selective annealing process under low pressure is used to tune PFO wrapping around the nanotubes. The resulting s-SWNT@PFO networks are then probed by AFM, Raman spectroscopy, absorption, photoluminescence and electrical experiments.

Graphene, known as one carbon layer material, holds attractive properties due to its hexagonal lattice, also called honeycomb structure. Since the seminal work on mechanically exfoliated few layer graphene, more growth processes were explored: Chemical Vapor Deposition (CVD) on metals or on silicon carbide (SiC); chemical reduction of graphene oxides and SiC sublimation. In contrast to the other graphene growth techniques, thermal decomposition of SiC provides wafer-scale homogeneous graphene spontaneously forming on semi-insulating substrate. SiC sublimation is the most promising option to achieve the transfer free and wafer-scale graphene. Furthermore, graphene/SiC is compatible with lithography techniques for further applications; thereby epitaxial graphene on SiC is a potential candidate for nanoelectronics. Until now, monolayer graphene growth by SiC sublimation at a pressure closed to the atmospheric pressure (around 900 mbar) and at high temperature (>1650°C) is well known . However, to obtain films with different and controlled characteristics such as the number of graphene layers or the type of doping by controlling the growth parameters remains challenging. We will present the initial growth stages from buffer layer to monolayer graphene on SiC (0001) as a function of the temperature at low pressure (10 mbar). A reproducible synthesis of low p-type doped monolayer graphene was optimized (few 10^11 cm-2). The p-type doping are obtained here on the bare samples without any post-growth process such as lithography. A prototypal HTA-100 furnace developed by Annealsys Company has allowed the synthesis of these original samples. All the samples were characterized by Raman spectroscopy and Atomic Force Microscopy (AFM). In addition, transport measurements (at room temperature and low temperature with high magnetic field) were carried out in the case of continuous monolayer graphene films showing especially characteristics of Quantum Hall Effect.

Chemical vapor deposition has proved to be successful in producing graphene samples on silicon carbide (SiC) homogeneous at the centimeter scale in terms of Hall conductance quantization. Here, we report on the realization of co-planar diffusive Al/ monolayer graphene/ Al junctions on the same graphene sheet, with separations between the electrodes down to 200 nm. Robust Josephson coupling has been measured for separations not larger than 300 nm. Transport properties are reproducible on different junctions and indicate that graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices.

We examine the excitonic nature of the E33 optical transition of the individual free-standing index-identified(23,7) single-walled carbon nanotube by means of the measurements of its radial-breathing-mode and G-modeRaman excitation profiles. We confirm that it is impossible to determine unambiguously the nature of its E33optical transition (excitonic vs band to band) based only on the excitation profiles. Nevertheless, by combiningRaman scattering, Rayleigh scattering, and optical absorption measurements on strictly the same individual(23,7) single-walled carbon nanotube, we show that the absorption, Rayleigh spectra, and Raman excitationprofiles of the longitudinal and transverse G modes are best fitted by considering the nature of the E33 transitionas excitonic. The fit of the three sets of data gives close values of the transition energy E33 and damping parameter. This comparison shows that the fit of the Raman excitation profiles provides with good accuracy the energy and damping parameter of the excitonic optical transitions in single-walled carbon nanotubes.

In this paper, we present an alternative way to study theoretically low-frequency collective modes of DWNTs based on the continuous 2D membrane theory. We obtain aωRBLM (do , di) relation being an equivalent of the conventional formulas established for individual SWNTs. We compare our theoretical predictions with Raman data measured on individual index-identified suspended DWNTs. A good agreement between the experiment and the predictions of the continuous theory is found. We show that the coupling in individual DWNTs strongly depends on the interlayer distance, which is manifested in the frequency shifts of the radial breathing-like modes (RBLMs) with respect to the radial breathing modes (RBM) of the individual inner and outer tubes. In terms of characterization, the combination of Ramanspectroscopy data and the predictions of continuous membrane theory may give additional criteria for the index-identification of DWNTs.

Raman spectroscopy (RS) of graphene-related materials (GRM) is being considered as a fast, versatile, powerful and non-destructive characterization technique. RS is sensitive to the number of layers, their stacking order, the nature and density of defects, the charge carrier density and in-plane strain variations. However, the positions, linewidths, profiles, intensities of the graphene/multilayer graphene (MLG) Raman bands are not only affected by all these perturbations but also depends on the uniformity across the probed area and on the substrate (through optical interference effects, dielectric screening…). An accurate interpretation of Raman spectra becomes then extremely complex and deserves the combined use of complementary diagnosis. We recently developed a RS set-up allowing to monitor simultaneously the laser power, transmission, reflection and Raman signal.In this contribution, we discuss the application of this tool for counting the number of layers of different kind of graphene/MLG samples with the aim to define standard procedures for GRM characterization on different substrates.