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III-nitride on silicon electrically injected microrings for nanophotonic circuits 
Auteur(s): Tabataba-Vakili Farsane, Rennesson Stéphanie, Damilano Benjamin, Frayssinet Eric, Duboz Jean-Yves, Semond Fabrice, Roland Iännis, Paulillo Bruno, Colombelli Raffaele, Kurdi Moustafa, Checoury Xavier, Sauvage Sebastien, Doyennette L., Brimont C., Guillet T., Gayral Bruno, Boucaud Philippe
(Article) Publié:
Optics Express, vol. 27 p.11800-11808 (2019)
Texte intégral en Openaccess : 
Ref HAL: hal-02100722_v1
DOI: 10.1364/OE.27.011800
WoS: 000464614400146
Exporter : BibTex | endNote
7 Citations
Résumé: Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm 2 output power density at 20 mA from such microrings with diameters of 30 to 50 µm. The first steps towards achieving an integrated photonic circuit are demonstrated.
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