The mechanical release of III‐nitride devices using h‐BN is a promising approach for heterogeneous integration. Upscaling this technology for industrial level requires solutions that allow a simple pick‐and‐place technique of selected devices for integration while preserving device performance. An advance that satisfies both of these requirements is demonstrated in this work. It is based on a lateral control of the h‐BN quality, using patterned sapphire with a SiO2 mask, to achieve localized van der Waals epitaxy of high‐quality GaN based device structures. After process fabrication, the devices can be individually picked and placed on a foreign substrate without the need for a dicing step. In addition, this approach could reduce delamination of h‐BN on large diameter substrates because each h‐BN region is smaller, with independent device structures. Discrete InGaN LEDs on h‐BN are grown and fabricated on 2 in. patterned sapphire using a SiO2 mask. A set of devices are selectively released and transferred to flexible aluminum tape. The transferred LEDs exhibit blue light emission around 435 nm. The approach presented here is scalable on any wafer size, can be applied to other types of nitride‐based devices, and can be compatible with commercial pick‐and‐place handlers for mass production.

InSe is a promising material in many aspects where the role of excitons is decisive. Here we report the sequential appearance in its luminescence of the exciton, the biexciton, and the P-band of the exciton-exciton scattering while the excitation power increases. The strict energy and momentum conservation rules of the P-band are used to reexamine the exciton binding energy. The new value >= 20 meV is markedly higher than the currently accepted one (14 meV), being however well consistent with the robustness of the excitons up to room temperature. A peak controlled by the Sommerfeld factor is found near the bandgap (similar to 1.36 eV). Our findings supported by theoretical calculations taking into account the anisotropic material parameters question the pure three-dimensional character of the exciton in InSe, assumed up to now. The refined character and parameters of the exciton are of paramount importance for the successful application of InSe in nanophotonics.

We investigate the highly anisotropic behavior of the in-plane and out-of-plane infrared-active phonons of hexagonal boron nitride by means of infrared reflectivity and absorption measurements under high pressure. Infrared reflectivity spectra at normal incidence on high-quality single crystals show strict fulfillment of selection rules and an unusually long E1u[transverse-optic (TO)] phonon lifetime. Accurate values of the dielectric constants at ambient pressure ε⊥0 = 6.96, ε⊥∞ = 4.95, ε∥0 = 3.37, and ε∥∞ = 2.84 have been determined from fits to the reflectivity spectra. The out-of-plane A2u phonon reflectivity band is revealed in measurements on an inclined facet, and absorption measurements at an incidence angle of 30° allow us to observe both the transverse- and longitudinal-optic A2u modes. Pressure coefficients and Grüneisen parameters for all infrared-active modes are determined and compared with ab initio calculations. While Grüneisen parameters are generally small in this layered crystal, the A2u(TO) displays an exceptionally large and negative Grüneisen parameter that results in widening of the type I hyperbolic region with increasing pressure. Softening of the A2u(TO) mode is induced by dynamical buckling of the flat honeycomb layers.

For more than seven decades, hexagonal boron nitride (hBN) has been employed asan inert, thermally stable engineering ceramic; since 2010, it has also been used as the optimal substrate for graphene in nanoelectronic and optoelectronic devices. Recent research has revealed that hBN exhibits a unique combination of optical properties that enable novel (nano) photonic functionalities. Specifically, hBN is a natural hyperbolic material in the mid-IR range,in which photonic material options are sparse. Furthermore, hBN hosts defects that can be engineered to obtain room-temperature, single-photon emission; exhibits strong second-order nonlinearities with broad implications for practical devices; and is a wide-bandgap semiconductor well suited for deep UV emitters and detectors. Inspired by these promising attributes, research on the properties of hBN and the development of large-area bulk and thin-film growth techniques has dramatically expanded. This Review offers a snapshot of current research exploring the properties underlying the use of hBN for future photonics functionalities and potential applications, and covers some of the remaining obstacles.

Dye confinement into carbon nanotube significantly affects the electronic charge density distribution of the final hybrid system. Using the electron-phonon coupling sensitivity of the Raman G-band, we quantify experimentally how charge transfer from thiophene oligomers to single walled carbon nanotube is modulated by the diameter of the nano-container and its metallic or semiconducting character. This charge transfer is shown to restore the electron-phonon coupling into defected metallic nanotubes. For sub-nanometer diameter tube, an electron transfer optically activated is observed when the excitation energy matches the HOMO-LUMO transition of the confined oligothiophene. This electron doping accounts for an important enhancement of the photoluminescence intensity up to a factor of nearly six for optimal confinement configuration. This electron transfer shifts the Fermi level, acting on the photoluminescence efficiency. Therefore, thiophene oligomer encapsulation allows modulating the electronic structure and then the optical properties of the hybrid system.

The monomeric chlorophyll, Chl(D1), which is located between the PD1PD2 chlorophyll pair and the pheophytin, Pheo(D1), is the longest wavelength chlorophyll in the heart of Photosystem II and is thought to be the primary electron donor. Its central Mg2+ is liganded to a water molecule that is H-bonded to D1/T179. Here, two site-directed mutants, D1/T179H and D1/T179V, were made in the thermophilic cyanobacterium, Thermosynechococcus elongatus, and characterized by a range of biophysical techniques. The Mn4CaO5 cluster in the water-splitting site is fully active in both mutants. Changes in thermoluminescence indicate that i) radiative recombination occurs via the repopulation of *Chl(D1) itself; ii) non-radiative charge recombination reactions appeared to be faster in the T179H-PSII; and iii) the properties of PD1PD2 were unaffected by this mutation, and consequently iv) the immediate precursor state of the radiative excited state is the Chl(D1)(+)Pheo(D1)(-) radical pair. Chlorophyll bleaching due to high intensity illumination correlated with the amount of O-1(2) generated. Comparison of the bleaching spectra with the electrochromic shifts attributed to Chl(D1) upon Q(A)(-) formation, indicates that in the T179H-PSII and in the WT*3-PSII, the Chl(D1) itself is the chlorophyll that is first damaged by O-1(2), whereas in the T179V-PSII a more red chlorophyll is damaged, the identity of which is discussed. Thus, Chl(D1) appears to be one of the primary damage site in recombination-mediated photoinhibition. Finally, changes in the absorption of Chl(D1) very likely contribute to the well-known electrochromic shifts observed at similar to 430 nm during the S-state cycle.