We present a numerical approach for the solution of EM scattering from a dielectric cylinder partially covered with graphene. It is based on a classical Fourier-Bessel expansion of the fields inside and outside the cylinder to which we apply the ad-hoc boundary conditions in the presence of graphene. Due to the singular nature of the electric field at the ends of the graphene sheet, we introduce auxiliary boundary conditions to better take this reality into account. The result is a very simple and very efficient method allowing the study of diffraction from such structures.

Nonequilibrium dynamics of TO phonons and low-frequency interlayer shear modes are mapped in femtosecond mid-infrared pump-probe experiments. Time-resolved changes of TO phonon absorption reveal a TO phonon lifetime of 1.2 ps, while the low-frequency excitations decay with a time constant of approximately 20 ps. The coupling of intralayer TO and interlayer motions manifests in a quasi-instantaneous redshift of the TO phonon resonance by some 10 cm −1. Theoretical calculations account for the coupling scenario and underline the relevance of inter-phonon interactions for the nonlinear phonon response of few-layer materials.

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of the electronic and optical properties of h-BN and the impact of various structural defects. Despite the large efforts in the last years, aspects such as the electronic band gap value, the exciton binding energy and the effect of point defects remained elusive, particularly when considering a single monolayer. Here, we directly measured the density of states of a single monolayer of h-BN epitaxially grown on highly oriented pyrolytic graphite, by performing low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The observed h-BN electronic band gap on defect-free regions is (6.8 ± 0.2) eV. Using optical spectroscopy to obtain the h-BN optical band gap, the exciton binding energy is determined as being of (0.7 ± 0.2) eV. In addition, the locally excited cathodoluminescence and photoluminescence show complex spectra that are typically associated to intragap states related to carbon defects. Moreover, in some regions of the monolayer h-BN we identify, using STM, point defects which have intragap electronic levels around 2.0 eV below the Fermi level.

We present a numerical approach for the solution of EM scattering from a dielectric cylinder partially covered with graphene. It is based on a clas- sical Fourier-Bessel expansion of the fields inside and outside the cylinder to which we apply the ad-hoc boundary conditions in the presence of graphene. Due to the singular nature of the electric field at the ends of the graphene sheet, we introduce auxiliary boundary conditions to better take this reality into ac- count. The result is a very simple and very efficient method allowing the study of diffraction from such structures. Our ultimate goal is to apply this approach to radiative heat transfer between graphene coated cylinders and planes.

Dispersionless energy bands in k space are a peculiar property gathering increasing attention for the emergence of novel electronic, magnetic, and photonic properties. Here, we explore the impact of electronic flat bands on the light-matter interaction. The van der Waals interaction between the atomic layers of hexagonal boron nitride induces flat bands along specific lines of the Brillouin zone. The macroscopic degeneracy along these lines leads to van Hove singularities with divergent joint density of states, resulting in outstanding optical properties of the excitonic states. For the direct exciton, we report a giant oscillator strength with a longitudinal-transverse splitting of 420 meV, a record value, confirmed by our ab initio calculations. For the fundamental indirect exciton, flat bands result in phonon-assisted processes of exceptional efficiency, that compete with direct absorption in reflectivity, and that make the internal quantum efficiency close to values typical of direct band gap semiconductors.

We present a theoretical study of near-field radiative thermal rectification combining phase-transition and high-infrared-transmittance materials. The phase-transition material vanadium dioxide (VO2), with a metal–insulator transition near 341 K, is utilized under a reasonable temperature. Four types of high-infrared-transmittance materials, including potassium bromide, sodium chloride, polyethylene, andmagnesium fluoride, are introduced as thin film substrates under a VO2 grating on one side of the near-field rectifier. We explore the effects of various high-infrared-transmittance thin-film substrates and relevant geometric parameters on the thermal rectification of the device. The results show that thermal rectification can be greatly enhanced by using a one-dimensional VO2 grating backed with a high-infraredtransmittance thin-film substrate. With the introduction of a high-infrared-transmittance substrate, the rectification ratio is dramatically boosted due to the enhancement of the substrate transmittance. This work predicts a remarkable rectification ratio as high as 161—greater than the recently reported peak values for comparable near-field radiative thermal rectification. The results outlined herein will shed light on the rapidly expanding fields of nanoscale thermal harvesting, conversion, and management.