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Physique Appliquée
(38) Production(s) de l'année 2022
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Hexagonal and rhombohedral polytypes in indium selenide films grown on c-plane sapphire
Auteur(s): De Brucker L., Moret M., Gil B., Desrat W.
(Article) Publié:
Aip Advances, vol. 12 p.055308 (2022)
Texte intégral en Openaccess :
Ref HAL: hal-03689421_v1
DOI: 10.1063/5.0091675
WoS: WOS:000793516000006
Exporter : BibTex | endNote
Résumé: We report on the growth of 2D layered indium selenide films on (0001)-oriented sapphire substrates by coevaporation. The θ − 2θ x-ray diffractograms reveal that the (00l) planes are preferentially oriented parallel to the substrate with a tendency to deviate from the 2D stacking as a function of the growth time. The ϕ-scans performed for the (107) and (10 10) orientations of the hexagonal (h) and rhombohedral (r) phases, respectively, reveal that both polytypes coexist in the epitaxial films. We show that the merging of the h-(100), r-(101), h-(101), and r-(102) lines results in different spectral shapes in the θ − 2θ scans according to samples, which gives qualitative information about the contribution of each polytype.
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Polytypes of sp2-Bonded Boron Nitride
Auteur(s): Gil B., Desrat W., Rousseau A., Elias C., Valvin P., Moret M., Li Jiahan, Janzen Eli, Edgar James H., Cassabois G.
(Article) Publié:
Crystals, vol. 12 p.782 (2022)
Texte intégral en Openaccess :
Ref HAL: hal-03684307_v1
DOI: 10.3390/cryst12060782
Exporter : BibTex | endNote
Résumé: The sp2-bonded layered compound boron nitride (BN) exists in more than a handful of different polytypes (i.e., different layer stacking sequences) with similar formation energies, which makes obtaining a pure monotype of single crystals extremely tricky. The co-existence of polytypes in a similar crystal leads to the formation of many interfaces and structural defects having a deleterious influence on the internal quantum efficiency of the light emission and on charge carrier mobility. However, despite this, lasing operation was reported at 215 nm, which has shifted interest in sp2- bonded BN from basic science laboratories to optoelectronic and electrical device applications. Here, we describe some of the known physical properties of a variety of BN polytypes and their performances for deep ultraviolet emission in the specific case of second harmonic generation of light.
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Atomic-Spring-like Effect in Glassy Silica-Helium Composites br
Auteur(s): Bowron Daniel T., Keen David A., Kint M., Weigel C., Ruffle B., Konczewicz L., Contreras S., Coasne Benoit, Garbarino Gaston, Beaudhuin Mickael, Haines Julien, Rouquette Jerome
(Article) Publié:
The Journal Of Physical Chemistry C, vol. 126 p.5722-5727 (2022)
Ref HAL: hal-03669554_v1
DOI: 10.1021/acs.jpcc.2c00026
WoS: WOS:000783122600037
Exporter : BibTex | endNote
Résumé: We determine the structural origin of an “atomic-spring-like effect”in a glassy silica-helium composite, which exhibits this mechanical property thatreversibly accumulates and restores energy at the subnanoscale based on a high-pressure experimental pair distribution function study combined with atom-scalemolecular simulations. These unexpected experimental results were obtained byusing a 3 μm spot size 61 keV X-ray beam and large area detector and bysubtracting the scattered intensity due to helium outside the sample from the silicasignal at the same focal point for each pressure point. The compression behavior ofthe glassy silica-helium composite is characterized on a structural level by the change from a uni- to bimodal distribution in the inter- tetrahedral distances in the amorphous isotropic structure of silica. We propose a simple characterization of this atomic-spring-like glass property using impedance spectroscopy measurements.
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Synthesis of a polyphenylacetylene/silica nanotube composite under high-temperature, high-pressure conditions
Auteur(s): Fabbiani Marco, Rouquette Jerome, Talbi Gael, Cambon Martine, Cambon Olivier, Santoro Mario, Konczewicz L., Contreras S., Haines Julien
(Article) Publié:
Canadian Journal Of Chemistry, vol. 100 p.239-243 (2022)
Texte intégral en Openaccess :
Ref HAL: hal-03628395_v1
DOI: 10.1139/cjc-2021-0175
WoS: WOS:000767175100010
Exporter : BibTex | endNote
Résumé: Phenylacetylene was inserted and polymerized in 5 nm diameter silica nanotubes under high pressure – high temperature conditions of 0.5 GPa and 437 K in an inert gas. The resulting nanocomposite was characterized by infrared and Raman spectroscopy and scanning and transmission electron microscopy. The vibrational spectroscopic data confirmed the formation of π-conjugated polyphenylacetylene and the absence of crystallization of the amorphous nanotubes. Scanning transmission electron microscopy coupled with energy dispersive X-ray spectroscopy, STEM-EDX, measurements confirmed the insertion of the polymer in the channels of the nanotubes and electron diffraction confirmed the amorphous nature of both the polymer and the host SiO 2 nanotubes. The obtained nanocomposite is a candidate material for gas sensing applications.
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Electrical control of excitons in GaN/(Al,Ga)N quantum wells
Auteur(s): Aristegui R., Chiaruttini F., Jouault B., Lefebvre P., Brimont C., Guillet T., Vladimirova M., Chenot S., Cordier Yvon, Damilano Benjamin
(Document sans référence bibliographique) Texte intégral en Openaccess :
Ref HAL: hal-03621796_v1
Ref Arxiv: 2203.13761
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé: A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photoluminescence and photo-induced current, we demonstrate that exciton density in the trap can be controlled via an external electric bias, which is capable of altering the trap depth. Application of a negative bias deepens the trapping potential, but does not lead to any additional accumulation of excitons in the trap. This is due to exciton dissociation instigated by the lateral electric field at the electrode edges. The resulting carrier losses are detected as an increased photo-current and reduced photoluminescence intensity. By contrast, application of a positive bias washes out the electrode-induced trapping potential. Thus, excitons get released from the trap and recover free propagation in the plane that we reveal by spatially-resolved photoluminescence.
Commentaires: 12 pages, 14 figures
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Ionic guest in ionic host: ionosilica ionogel composites via ionic liquid confinement in ionosilica supports
Auteur(s): Abdou Nicole, Alonso Bruno, Brun Nicolas, Landois P., Taubert Andreas, Hesemann Peter, Mehdi Ahmad
(Article) Publié:
Materials Chemistry Frontiers, vol. 6 p.939-947 (2022)
Texte intégral en Openaccess :
Ref HAL: hal-03621507_v1
DOI: 10.1039/d2qm00021k
Exporter : BibTex | endNote
Résumé: Ionosilica ionogels, i.e. composites consisting of an ionic liquid (IL) guest confined in an ionosilica host matrix, were synthesized via a non-hydrolytic sol–gel procedure from a tris-trialcoxysilylated amine precursor using the IL [BMIM]NTf2 as solvent. Various ionosilica ionogels were prepared starting from variable volumes of IL in the presence of formic acid. The resulting brittle and nearly colourless monoliths are composed of different amounts of IL guests confined in an ionosilica host as evidenced via thermogravimetric analysis, FT-IR, and 13C CP-MAS solid-state NMR spectroscopy. In the following, we focused on confinement effects between the ionic host and guest. Special host–guest interactions between the IL guest and the ionosilica host were evidenced by 1H solid-state NMR, Raman spectroscopy, and broadband dielectric spectroscopy (BDS) measurements. The three techniques indicate a strongly reduced ion mobility in the ionosilica ionogel composites containing small volume fractions of confined IL, compared to conventional silica-based ionogels. We conclude that the ionic ionosilica host stabilizes an IL layer on the host surface; this then results in a strongly reduced ion mobility compared to conventional silica hosts. The ion mobility progressively increases for systems containing higher volume fractions of IL and finally reaches the values observed in conventional silica based ionogels. These results therefore point towards strong interactions and confinement effects between the ionic host and the ionic guest on the ionosilica surface. Furthermore, this approach allows confining high volume fractions of IL into self-standing monoliths while preserving high ionic conductivity. These effects may be of interest in domains where IL phases must be anchored on solid supports to avoid leaching or IL spilling, e.g., in catalysis, in gas separation/sequestration devices or for the elaboration of solid electrolytes for (lithium-ion) batteries and supercapacitors
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Bernal Boron Nitride Crystals Identified by Deep-Ultraviolet Cryomicroscopy
Auteur(s): Rousseau A., Valvin P., Desrat W., Xue L., Li J., Edgar J., Cassabois G., Gil B.
(Article) Publié:
Acs Nano, vol. 16 p.2756 (2022)
Ref HAL: hal-03603645_v1
DOI: 10.1021/acsnano.1c09717
Exporter : BibTex | endNote
Résumé: The presence of metastable Bernal stacking boron nitride is verified by combining second harmonic generation (SHG) and photoluminescence (PL) spectroscopy. The scanning confocal cryomicroscope, operating in the deep-ultraviolet range, shows a one-to-one correlation between inversion symmetry breaking probed by SHG and the detection of an intense PL line at ∼6.035 eV, the specific signature of the noncentrosymmetric Bernal stacking. The coherent character of the Bernal phase in boron nitride crystals is demonstrated by two-photon excitation spectroscopy. Direct and indirect excitons are simultaneously detected in the emission spectrum; they are quasi-degenerate, in agreement with theoretical predictions for Bernal boron nitride. The transition from AA′ to AB stacking is characterized by an intense emission from stacking faults at the grain boundaries of hexagonal and Bernal boron nitride crystals.
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