Low-dimensional boron nitride (BN) chains were prepared in the one-dimensional pores of the siliceous zeolites theta-one (TON) and Mobil-twelve (MTW) by the infiltration, followed by the dehydrocoupling and pyrolysis of ammonia borane under high-pressure, high-temperature conditions. High-pressure X-ray diffraction in a diamond anvil cell and in a large-volume device was used to follow in situ these different steps in order to determine the optimal conditions for this process. Based on these results, millimeter-sized samples of BN/TON and BN/MTW were synthesized. Characteristic B–N stretching vibrations of low-dimensional BN were observed by infrared and Raman spectroscopies. The crystal structures were determined using a combination of X-ray diffraction and density functional theory with one and two one-dimensional zig-zag (BN)x chains per pore in BN/TON and BN/MTW, respectively. These 1-D BN chains potentially have interesting photoluminescence properties in the far ultraviolet region of the electromagnetic spectrum.

This paper presents low-temperature measurements of magnetoresistivity in heavily doped n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal-organic vapor phase epitaxy, halide vapor phase epitaxy and ammonothermal. Additionally, GaN crys-tallized by High Nitrogen Pressure Solution method was also examined. It was found that all the samples under study exhibit negative magnetoresistivity at low temperature (10 K < T < 50 K) and for some samples this effect is observed up to 100 K. This negative magnetoresistivity effect is analyzed in the frame of the weak localization phenomena in the case of three-dimensional electron gas in a highly doped semiconductor. This analysis allows to determine the phasing coherence time τφ for heavily doped n-type GaN. The obtained τφ value is proportional to T-1.34, indicating that the electron–electron interaction is the main dephasing mechanism for the free carriers.

The terahertz absorption spectra of sodium magnesium chlorophyllin (Chl-Mg-Na) and sodium copper chlorophyllin (Cu-Chl), two major members of the chlorophyll derivative family, have been measured in the range 0.2−2.5 THz, at room temperature. The capability of terahertz spectroscopy for quantitative characterization of Chl-Mg-Na intermolecular vibrations was investigated and the sensitivity of transitions with degree of hydration by changes in the molecular environment was examined. For the Cu-Chl derivative, a broad feature was observed around 1.8 THz which currently hinders clear Cu-Chl identification and quantification.

We apply reverse engineering techniques (RET) to analyze the dehydration process of a sunflower leaf with terahertz time-domain spectroscopy. The multilayer structure of the leaf is extracted with accuracy during the entire process. Time variations of thickness and the complex index are emphasized for all leaf layers (2 cuticules, 2 epiderms, and 2 mesophylls). The global thickness of the sunflower leaf is reduced by up to 40% of its initial value.

We apply reverse engineering techniques in the time domain THz regime to recover the multilayer structure of a sunflower leaf. Results are successful and allow to analyze the time sunflower behavior under water stress

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.

Abstract Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized graphene, and so far no cyclotron emission from Dirac fermions has been reported. One way to eliminate this last non-radiative process is to sufficiently modify the dispersion of the Landau levels by opening a small gap in the linear band structure. A proven example of such gapped graphene-like materials are HgTe quantum wells close to the topological phase transition. In this work, we experimentally demonstrate Landau emission from Dirac fermions in such HgTe quantum wells, where the emission is tunable by both the magnetic field and the carrier concentration. Consequently, these results represent an advance in the realization of terahertz Landau lasers tunable by magnetic field and gate-voltage.