The presence of metastable Bernal stacking boron nitride is verified by combining second harmonic generation (SHG) and photoluminescence (PL) spectroscopy. The scanning confocal cryomicroscope, operating in the deep-ultraviolet range, shows a one-to-one correlation between inversion symmetry breaking probed by SHG and the detection of an intense PL line at ∼6.035 eV, the specific signature of the noncentrosymmetric Bernal stacking. The coherent character of the Bernal phase in boron nitride crystals is demonstrated by two-photon excitation spectroscopy. Direct and indirect excitons are simultaneously detected in the emission spectrum; they are quasi-degenerate, in agreement with theoretical predictions for Bernal boron nitride. The transition from AA′ to AB stacking is characterized by an intense emission from stacking faults at the grain boundaries of hexagonal and Bernal boron nitride crystals.

Kirchhoff’s law is one of the most fundamental law in thermal radiation. The violation of traditional Kirchhoff’s law provides possibilities for achieving energy conversion with higher efficiency. Various micro-structures have been designed to realize single-band nonreciprocal thermal emitters. However, dual-band nonreciprocal thermal radiations are still rarely studied. Here, we introduce magneto-optical material into a cascading one-dimensional (1-D) magnetophotonic crystal (MPC) heterostructure composed of two 1-D MPCs and a metal layer. Assisted by the nonreciprocity of the magneto-optical material and the coupling effect of two optical Tamm states (OTSs), a dual-band nonreciprocal lithography-free thermal emitter is achieved. The emitter exhibits near-complete dualchannel nonreciprocal thermal radiation at the wavelengths of 15.337 μm and 15.731 μm for an external magnetic field of 3T and an incident angle of 56 degrees. Besides, the magnetic field distribution is also calculated to confirm that the dual-band nonreciprocal radiation originates from the coupling effect between two OTSs. Our work may pave the way for constructing dual-band and multi-band nonreciprocal thermal emitters.

Boron Nitride (BN) layers with sp2 bonding have been grown by Metal Organic Chemical Vapor Deposition (MOCVD) on AlN underlayers themselves deposited on c-plane sapphire substrates. Two different boron precursors were employed: trimethylboron (TMB) and triethylboron (TEB) while ammonia was used as the nitrogen precursor. The BN obtained epitaxial BN films contain ordered rhombohedral (rBN) and partially ordered turbostratic (tBN) stackings as evidenced by Xray Diffraction analysis. We discriminatively identify the PL signatures of the rBN and tBN from those typical of the hexagonal (hBN) and Bernal stackings (bBN). The optical signature of tBN appears at 5.45eV and it intercalates between the two recombination bands typical of rBN at 5.35 eV ( strong intensity) and 5.55 eV(weaker intensity) . The analogs of the high intensity band at 5.35 eV in rBN sit at 5.47 eV for hBN and at 5.54 eV for bBN.

We propose a simple semi analytical model that allows to compute the transmittance and reflectance of a one dimensional subwavelength graphene strip grating under an external static magnetic field. In this model graphene is treated as an anisotropic layer with atomic thickness and a frequency dependent complex permittivity tensor. The model is based on an effective medium approach (EMA) and a rigorous phase correction. The scattering matrix approach is also used to take into account the different resonant phenomena occurring in the structure. The approach is validated against the Polynomial Modal Method (PMM) through numerical examples.