Ref HAL: hal-03851155_v1
Ref Arxiv: 2106.05226
DOI: 10.1007/978-3-030-97493-0
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé:

The properties of vector vortex beams in vertical-cavity-surface emitting lasers with frequency-selective feedback is investigated. They are interpreted as high-order vortex solitons with a spatially non-uniform, but locally linear polarization state. In contrast to most schemes to obtain vector vortex beams relying on imprinting the polarization structure, vector vortex solitons form spontaneously due to the near polarization degeneracy in vertical-cavity devices. We observe radially, hyperbolic and spiral polarization configurations depending on small residual anisotropies in the system and multi-stability between different states. In addition, we demonstrate flip-flop operation of laser solitons via in principle local electronic nonlinearities. Combining the two themes might open up a route for a simple device enabling fast switching between different vector vortex beams for applications. The investigations connect nicely the fields of nonlinear science, singular optics, structured light and semiconductor laser technology.

Ref HAL: hal-03842086_v1
DOI: 10.1103/PhysRevMaterials.6.094009
WoS: WOS:000860686400005
Exporter : BibTex | endNote
Résumé:

We report hyperspectral microscopy in sp2-bonded boron nitride polytypes with a simultaneous inspection of the photoluminescence signal in the UV-C and UV-B spectral ranges. By comparing two different polytypes extracted from the same polycrystalline sample, we reveal that the well-known “4 eV defect” does not emit at the same energy for polytypes in the AB and AA′ stackings. The zero-phonon line is either at 4.14 or 4.16 eV for the noncentrosymmetric AB stacking, instead of the usual 4.09 eV energy in the AA′ stacking. Our results open the way for different characterization methods of the stacking order in sp2-bonded boron nitride, and bring alternative inputs for the elucidation of the atomistic configuration of points defects by advanced ab initio calculations.

Ref HAL: hal-03837709_v1
Ref Arxiv: 2210.05485
Ref INSPIRE: 2164234
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé:

We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wide spectral range that is covered by G centers emission. By finely tuning the size of the microrings, we match their zero-phonon line at 1278 nm with a resonant mode of quality factor around 3000 and volume 7.2 (lambda over n)^3. The zero-phonon line intensity is enhanced by a factor of 5, both in continuous-wave and time-resolved measurements. This is attributed to the Purcell enhancement of zero-phonon spontaneous emission into the resonant mode and quantitatively understood considering the distribution of the G centers dipoles. Despite the enhancement of the zero-phonon emission, we do not observe any sizeable decrease of the average lifetime of the G centers, which points at a low radiative yield (<10%). We reveal the detrimental impact of parasitic defects in heavily implanted silicon, and discuss the perspectives for quantum electrodynamics experiments with individual color centers in lightly implanted SOI rings. Our results provide key information for the development of deterministic single photon sources for integrated quantum photonics.

Ref HAL: hal-03826961_v1
DOI: 10.3390/s22218131
Exporter : BibTex | endNote
Résumé:

We introduce a Domain Decomposition Spectral Method (DDSM) as a solution for Maxwell’s equations in the frequency domain. It will be illustrated in the framework of the Aperiodic Fourier Modal Method (AFMM). This method may be applied to compute the electromagnetic field diffracted by a large-scale surface under any kind of incident excitation. In the proposed approach, a large-size surface is decomposed into square sub-cells, and a projector, linking the set of eigenvectors of the large-scale problem to those of the small-size sub-cells, is defined. This projector allows one to associate univocally the spectrum of any electromagnetic field of a problem stated on the large-size domain with its footprint on the small-scale problem eigenfunctions. This approach is suitable for parallel computing, since the spectrum of the electromagnetic field is computed on each sub-cell independently from the others. In order to demonstrate the method’s ability, to simulate both near and far fields of a full three-dimensional (3D) structure, we apply it to design large area diffractive metalenses with a conventional personal computer.

Ref HAL: hal-03806711_v1
Ref Arxiv: 2206.03022
DOI: 10.1103/PhysRevB.106.155404
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé:

Over the last few years, broken symmetry within crystals has attracted extensive attention since it can improve the control of light propagation. In particular, low-symmetry Bravais crystal can support shear polaritons, which has great potential in thermal photonics. In this work, we first use the fluctuation-dissipation theorem to investigate mechanisms of near-field thermal radiation (NFTR) in a low-symmetry Bravais crystal. The NFTR between such crystal slabs is nearly four orders of magnitude larger than the blackbody limit, demonstrating its remarkable potential for noncontact heat dissipation for nanoscale circuits or other devices. Moreover, we report a form of twist-induced near-field thermal control system employing the low-symmetry Bravais crystal medium (β-Ga2O3), showing that this crystal can serve as an excellent platform for twist-induced near-field thermal control. Due to the intrinsic shear effect, the twist-induced modulation supported by low-symmetry Bravais crystal exceeds that by high-symmetry crystal. We further clarify how the shear effect affects the twist-induced thermal-radiation modulation supported by hyperbolic and elliptical polaritons and show that the shear effect significantly enhances the twist-induced thermal control induced by the elliptical polariton mode. These results open directions for thermal-radiation control in low-symmetry materials, including geological minerals, common oxides, and organic crystals.

Ref HAL: hal-03794436_v1
DOI: 10.1103/PhysRevResearch.4.L032040
Exporter : BibTex | endNote
Résumé:

We study the superradiance of optical phonons during the two- to three-dimensional (2D-3D) crossover of the light-matter interaction in multilayers of atomic crystals. We show the emergence of a superradiant regime with a mode having a linewidth first increasing linearly with the number N of monolayers, and then decreasing as N^{−3} to zero because of the formation of stationary phonon polaritons. The linewidth culminates to values of the order of the longitudinal-transverse splitting. We estimate the extremum of the radiative efficiency for various 2D materials in the superradiant regime. We predict radiative efficiencies larger than 50% for optical phonons emitting between 6 and 165 μm. Superradiance appears as a key resource for mid- and far-infrared optophononics and advanced thermal management using multilayers of 2D materials as the active medium.

Ref HAL: hal-03783120_v1
Ref Arxiv: 2206.14561
DOI: 10.1103/PhysRevB.106.115203
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé:

Using the self-consistent Born approximation, we study a topological phase transition appearing in bulk HgCdTe crystals induced uncorrelated disorder due to both randomly distributed impurities and fluctuations in Cd composition. By following the density-of-states evolution, we clearly demonstrate the topological phase transition, which can be understood in terms of the disorder-renormalized mass of Kane fermions. We find that the presence of a heavy-hole band in HgCdTe crystals leads to the topological phase transition at much lower disorder strength than is expected for conventional three-dimensional topological insulators. Our theoretical results can also be applied to other narrow-gap zinc-blende semiconductors such as InAs, InSb, and their ternary alloys InAsSb.

Commentaires: 8 pages, 4 figures