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(27) Production(s) de l'année 2023
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Computer simulations of the glass transition and glassy materials
Auteur(s): Barrat Jean-Louis, Berthier L.
(Article) Publié:
Comptes Rendus Physique, vol. 24 p.1-16 (2023)
Texte intégral en Openaccess :
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Liquid--Hexatic Transition for Soft Disks
Auteur(s): Nishikawa Y., Krauth Werner, Maggs A. C.
(Article) Publié:
Physical Review E, vol. 108 p.024103 (2023)
Texte intégral en Openaccess :
Ref HAL: hal-04076680_v1
Ref Arxiv: 2304.10143
DOI: 10.1103/PhysRevE.108.024103
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé: We study the liquid--hexatic transition of soft disks with massively parallel simulations and determine the equation of state as a function of system size. For systems with interactions decaying as the inverse $m$th power of the separation, the liquid--hexatic phase transition is continuous for $m = 12$ and $m=8$, while it is of first order for $m = 24$. The critical power $m$ for the transition between continuous and first-order behavior is larger than previously reported. The continuous transition for $ m=12 $ implies that the two-dimensional Lennard-Jones model has a continuous liquid--hexatic transition at high temperatures. We also study the Weeks--Chandler--Andersen model and find a continuous transition at high temperatures, that is consistent with the soft-disk case for $m=12$. Pressure data as well as our implementation are available from an open-source repository.
Commentaires: 7 pages, 4 figures
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Structure and elasticity of model disordered, polydisperse, and defect-free polymer networks
Auteur(s): Sorichetti V., Ninarello A. S., Ruiz-Franco José, Hugouvieux Virginie, Zaccarelli Emanuela, Micheletti Cristian, Kob W., Rovigatti Lorenzo
(Article) Publié:
The Journal Of Chemical Physics, vol. 158 p.074905 (2023)
Texte intégral en Openaccess :
Ref HAL: hal-04043309_v1
Ref Arxiv: 2211.04810
DOI: 10.1063/5.0134271
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé: The elasticity of disordered and polydisperse polymer networks is a fundamental problem of soft matter physics that is still open. Here, we self-assemble polymer networks via simulations of a mixture of bivalent and tri- or tetravalent patchy particles, which result in an exponential strand length distribution analogous to that of experimental randomly cross-linked systems. After assembly, the network connectivity and topology are frozen and the resulting system is characterized. We find that the fractal structure of the network depends on the number density at which the assembly has been carried out, but that systems with the same mean valence and same assembly density have the same structural properties. Moreover, we compute the long-time limit of the mean-squared displacement, also known as the (squared) localization length, of the cross-links and of the middle monomers of the strands, showing that the dynamics of long strands is well described by the tube model. Finally, we find a relation connecting these two localization lengths at high density and connect the cross-link localization length to the shear modulus of the system.
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The impact of valley profile on the mobility and Kerr rotation of transition metal dichalcogenides
Auteur(s): Sohier T., de Melo Pedro, Zanolli Zeila, Verstraete Matthieu Jean
(Article) Publié:
2D Materials, vol. 10 p. (2023)
Texte intégral en Openaccess :
Ref HAL: hal-03936372_v1
Ref Arxiv: 2207.00452
DOI: 10.1088/2053-1583/acb21c
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé: Abstract The transport and optical properties of semiconducting transition metal dichalcogenides around room temperature are dictated by electron-phonon scattering mechanisms within a complex, spin-textured and multi-valley electronic landscape. The relative positions of the valleys are critical, yet they are sensitive to external parameters and very difficult to determine directly. We propose a first-principles model as a function of valley positions to calculate carrier mobility and Kerr rotation angles, and apply it to MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$. The model brings valuable insights, as well as quantitative predictions of macroscopic properties for a wide range of carrier density. The doping-dependant mobility displays a characteristic peak, the height depending on the position of the valleys. In parallel, the Kerr rotation signal is enhanced when same spin-valleys are aligned, and quenched when opposite spin-valleys are populated. We provide guidelines to optimize and correlate these quantities with respect to experimental parameters, as well as the theoretical support for \emph{in situ} characterization of the valley positions.
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Infrared-active phonons in one-dimensional materials and their spectroscopic signatures
Auteur(s): Rivano Norma, Marzari Nicola, Sohier T.
(Article) Publié:
Npj Computational Materials, vol. 9 p.194 (2023)
Texte intégral en Openaccess :
Ref HAL: hal-03917632_v2
Ref Arxiv: 2208.09887
DOI: 10.1038/s41524-023-01140-2
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé: Dimensionality provides a clear fingerprint on the dispersion of infrared-active, polar-optical phonons. For these phonons, the local dipoles parametrized by the Born effective charges drive the LO-TO splitting of bulk materials; this splitting actually breaks down in two-dimensional materials. Here, we extend the existing theory to the one-dimensional (1D) case. Combining an analytical model with the implementation of density-functional perturbation theory in 1D boundary conditions, we show that the dielectric splitting in the dispersion relations collapses logarithmically at the zone center. The dielectric properties and the radius of the 1D materials are linked by the present work to these red shifts, opening novel IR and Raman characterization avenues.
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Electron-phonon interaction and phonons in 2d doped semiconductors
Auteur(s): Macheda Francesco, Sohier T., Barone Paolo, Mauri Francesco
(Article) Publié:
Physical Review B, vol. p.094308 (2023)
Texte intégral en Openaccess :
Ref HAL: hal-03917628_v1
Ref Arxiv: 2212.12237
DOI: 10.1103/PhysRevB.107.094308
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé: Electron-phonon interaction and phonon frequencies of doped polar semiconductors are sensitive to long-range Coulomb forces and can be strongly affected by screening effects of free carriers, the latter changing significantly when approaching the two-dimensional limit. We tackle this problem within a linear-response dielectric-matrix formalism, where screening effects can be properly taken into account by generalized effective charge functions and the inverse scalar dielectric function, allowing for controlled approximations in relevant limits. We propose complementary computational methods to evaluate from first principles both effective charges -- encompassing all multipolar components beyond dynamical dipoles and quadrupoles -- and the static dielectric function of doped two-dimensional semiconductors, and provide analytical expressions for the long-range part of the dynamical matrix and the electron-phonon interaction in the long-wavelength limit. As a representative example, we apply our approach to study the impact of doping in disproportionated graphene, showing that optical Fr\"ohlich and acoustic piezoelectric couplings, as well as the slope of optical longitudinal modes, are strongly reduced, with a potential impact on the electronic/intrinsic scattering rates and related transport properties.
Commentaires: 28 pages, 11 figures
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