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(167) Production(s) de LEFEBVRE P.
Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures Auteur(s): Chiaruttini F., Guillet T., Brimont C., Scalbert D., Cronenberger S., Jouault B., Lefebvre P., Damilano B., Vladimirova M.
(Article) Publié:
Physical Review B, vol. 103 p.045308 (2021)

Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures Auteur(s): Vladimirova M., Chiaruttini F., Guillet T., Brimont C., Lefebvre P., Chenot Sebastien, Jouault B., Cordier Yvon, Damilano Benjamin
Conférence invité: 5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES (Moscou, RU, 20190715) 
Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures Auteur(s): Vladimirova M., Chiaruttini F., Guillet T., Brimont C., Jouault B., Lefebvre P., Chenot Sebastien, Cordier Yvon, Damilano Benjamin
Conférence invité: 13th International Conference on Nitride Semiconductors (ICNS13) (Bellevue, US, 20190709) 
Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures Auteur(s): Chiaruttini F., Guillet T., Brimont C., Jouault B., Lefebvre P., Vives Jessica, Chenot Sebastien, Cordier Yvon, Damilano Benjamin, Vladimirova M.
(Article) Publié:
Nano Letters, vol. 19 p.49114918 (2019)

Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells Auteur(s): Guillet T., Chiaruttini F., Brimont C., Bretagnon T., Doyennette L., Lefebvre P., Valvin P., Damilano Benjamin, Chenot Sebastien, Cordier Yvon, Vladimirova M.
Conférence invité: 3rd TeraMetaNano International Conference (Uxmal, MX, 20180325) 
Phase transition of indirect excitons in GaN quantum wells. Auteur(s): Guillet T., Chiaruttini F., Brimont C., Bretagnon T., Doyennette L., Lefebvre P., Valvin P., Damilano Benjamin, Chenot Sebastien, Cordier Yvon, Vladimirova M.
Conference: International Workshop on Nitride semiconductors  IWN2018. (Kanazawa, JP, 20181111) 
Switching of exciton character in double InGaN/GaN quantum wells. Auteur(s): Suski T., Staszczak G, Korona K, Lefebvre P., Monroy E., Drozdz P, Muziol Grzegorz, Skierbiszewski C., Gibasiewicz K, Perlin P
Conference: International Workshop on Nitride semiconductors  IWN2018. (Kanazawa, JP, 20181111) 