Laboratoire Charles Coulomb UMR 5221 CNRS/UM2 (L2C)


Accueil > La Recherche > Axes & Equipes > Physique Appliquée > Transport Quantique & Nouveaux Systèmes 2D > Thème : Nanostructuration des Matériaux

III-N Epitaxy : InN, GaN, AlN

par Sandra Ruffenach - publié le

© L2C

The former GES Epitaxy group was involved in the growth of nitrides. Our work in this field has been to understand and optimise the growth mechanisms and to analyze the effects and correlation between growth parameters, as well as their impact on the optical and electronic properties of semiconductor nitrides, in view of realizing devices.
From 1995, our work was dedicated to the study of the MOCVD growth of GaN, AlN and related compounds and heterostructures. As a part of a RTN network (RENIBEL) dedicated to the Bright light Emitters based on rare earth doped Gallium Nitride, we studied rare earth doped GaN growth by Molecular Beam Epitaxy (MBE).
In 2002, our team has been the first team in Europe to realize the epitaxy of Indium Nitride (InN) by MOCVD.

Main publications on InN :

 "Recent advances in the MOVPE growth of indium nitride"
S. Ruffenach, M. Moret, O. Briot, B. Gil
Phys. Stat. Solidi A 207, 9 (2010)

 "MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphire"
M. Moret, S. Ruffenach, O. Briot, B. Gil
Phys. Stat. Solidi A 207, 24 (2010).

 "Ammonia : A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy"
S. Ruffenach, M. Moret, O. Briot, B. Gil
Appl. Phys. Letters 95, 042102 (2009)

 "The determination of the bulk residual doping in indium nitride films using photoluminescence"
M. Moret, S. Ruffenach, O. Briot, B. Gil
Appl. Phys. Letters 95, 031910 (2009)

 "Optical, structural investigations and band-gap bowing parameter of GaInN alloys"
M. Moret, B. Gil, S. Ruffenach, O. Briot, Ch. Giesen, M. Heuken, S. Rushworth, T. Leese, M. Succi
J. Crystal Growth 311, 2795 (2009)

 "MOVPE growth of InN films and quantum dots"
B. Maleyre, O. Briot, S. Ruffenach
J. Crystal Growth 269 , 15 (2004)

 "Indium Nitride Quantum Dots growth by Metal Organic Vapor Phase Epitaxy"
O. Briot, B. Maleyre, S. Ruffenach
Appl. Phys. Letters 83, 2919 (2003)

Main publications on GaN, GaAlN :

 "Far UV resonant Raman scattering in hexagonal Ga1-xAlxN alloys"
Demangeot, F ; Frandon, J ; Renucci, MA ; Sands, HS ; Batchelder, DN ; Briot, O ; Ruffenach-Clur, S
Solid State Com. 109, 519 (1999)

 "Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1-xAlxN solid solutions"
Demangeot, F ; Groenen, J ; Frandon, J ; Renucci, MA ; Briot, O ; Clur, S ; Aulombard, RL
Appl. Phys. Letters 72, 2674 (1998)

 "Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire"
Rouviere, JL ; Arlery, M ; Daudin, B ; Feuillet, G ; Briot, O
Mat. Sci. Eng. B 50, 61 (1997)

 "Optimization of the MOVPE growth of GaN on sapphire"
Briot, O ; Alexis, JP ; Tchounkeu, M ; Aulombard, RL
Mat. Sci. Eng. B 43, 147 (1997)

 "Properties of a photovoltaic detector based on an n-type GaN Schottky barrier"
Binet, F ; Duboz, JY ; Laurent, N ; Rosencher, E ; Briot, O ; Aulombard, RL
J. Appl. Phys. 91, 6449 (1997)

 "Optical properties of GaN epilayers on sapphire"
Tchounkeu, M ; Briot, O ; Gil, B ; Alexis, JP ; Aulombard, RL
J. Appl. Phys. 80, 5352 (1996)

Main publications on rare earth doped GaN :

 "Lattice order in thulium-doped GaN epilayers : In situ doping versus ion implantation"
Hernandez, S ; Cusco, R ; Artus, L ; Nogales, E ; Martin, RW ; O’Donnell, KP ; Halambalakis, G ; Briot, O ; Lorenz, K ; Alves, E
Optical materials 28, 771 (2006)

 "Selectively excited photoluminescence from Eu-implanted GaN"
Wang, K ; Martin, RW ; O’Donnell, KP ; Katchkanov, V ; Nogales, E ; Lorenz, K ; Alves, E ; Ruffenach, S ; Briot, O
Appl. Phys. Letters 87, 112107 (2005)

 "High-temperature annealing and optical activation of Eu-implanted GaN"
Lorenz, K ; Wahl, U ; Alves, E ; Dalmasso, S ; Martin, RW ; O’Donnell, KP ; Ruffenach, S ; Briot, O
Appl. Phys. Letters 85, 2712 (2004)

 "Amorphisation of GaN during processing with rare earth ion beams"
Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T ; Ruterana, P ; Ruffenach, S ; Briot, O
Superlattices and Microstuctures 36, 737 (2004)

 "Growth and characterisation of Eu doped GaN thin films"
Halambalakis, G ; Rousseau, N ; Briot, O ; Ruffenach, S ; Aulombard, RL ; Edwards, PR ; O’Donnell, KP ; Wojtowicz, T ; Ruterana, P
Superlattices and Microstuctures 36, 721 (2004)

 "Er Doped GaN by gas source molecular beam epitaxy on GaN templates"
Rousseau, N ; Briot, O ; Ribes, V ; Aulombard, RL
New applications for wide-bandgap semiconductors 764, 239 (2003)