Rechercher
Accueil > Production scientifique
(94) Production(s) de CONTRERAS S.
|
Giant step bunching occurrence during graphene growth on 4H SiC(0001) 
Auteur(s): Hrich H.
(Affiches/Poster)
Graphene 2020 on line (On line, FR), 2020-10-19Texte intégral en Openaccess : |
, 
|
|
High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials Auteur(s): Konczewicz L., Juillaguet S., Litwin-Staszewska E., Piotrzkowski R., Peyre H., Matta S., Al Khalfioui M., Leroux M., Damilano B., Brault J., Contreras S.
(Article) Publié:
Journal Of Applied Physics, vol. 128 p.085703 (2020)
Texte intégral en Openaccess : |
|
|
Photoluminescence of GaN and AlxGa1-xN (x≤ 0.2) doped with Mg and grown by molecular beam epitaxy Auteur(s): Leroux Mathieu, Brault Julien, Matta S., Al khalfioui Mohamed, Damilano Benjamin, Contreras S., Juillaguet S., Konczewicz L., Gil B., Brochen S. (Affiches/Poster) JNMO (Cap Esterel-Aguay, FR), 2018-06-13 |
|
|
Structural and electronic properties of epitaxial graphene grown on SiC (0001) at low argon pressure Auteur(s): Wang T., Landois P., Bayle M., Huntzinger J.-R., De cecco Alessandro, Courtois Hervé, Winkelmann Clemens, Paillet M., Jouault B., Contreras S. (Affiches/Poster) International Conference on the physics semiconductors (Montpellier, FR), 2018-07-30 |
|
|
Photoluminescence of Mg−doped GaN and AlxGa1−xN (x< 0.2) grown by molecular beam epitaxy
Auteur(s): Leroux Mathieu, Brault Julien, Matta S., Al khalfioui Mohamed, Damilano Benjamin, Contreras S., Juillaguet S. (Affiches/Poster) International Conference on the physics semiconductors (Montpellier, FR), 2018-07-30 |
|
|
(Al,Ga)N quantum dots for deep UV LEDs Auteur(s): Brault Julien, Matta S., Al khalfioui Mohamed, Korytov M, Ngo T. H., Vuong P., Leroux Mathieu, Damilano Benjamin, Chenot S., Vennegues P, Duboz J. y., Massies Jean, Chaix C., Peyre H., Juillaguet S., Contreras S., Gil B.
Conference: International Workshop on Nitride Semiconductor (Kanazawa, JP, 2018-11-11) |
|
|
Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN Auteur(s): Contreras S., Konczewicz L., Juillaguet S., Peyre H., Al Khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Gil B., Brault Julien (Affiches/Poster) International Workshop on Nitride Semiconductor (Kanazawa, JP), 2018-11-11 |
