Laboratoire Charles Coulomb UMR 5221 CNRS/UM2 (L2C)

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Accueil > La Recherche > Axes & Equipes > Physique de l’Exciton, du Photon & du Spin > Optique des états collectifs et des spins (OECS) > Etats collectifs dans les semiconducteurs > IXTASE

IXTASE

IXTASE (ANR project, 2021-2024)

Indirect eXciTons for emerging quAntum StatEs

  • Project coordinator : Maria Vladimirova, Laboratoire Charles Coulomb, Montpellier
  • Project goal : exploring (i) novel semiconductor nanostructures hosting Coulomb bound electron-hole pairs which have a large built-in static dipole moment - indirect excitons (IXs), and (ii) emerging collective states that these IXs form.
  • Partners :
    • L2C, Montpellier
    • LPCNO, Toulouse
    • CRHEA, Sophia Antipolis
    • INSP, Paris
  • ANR Collaborative Research Program (PRC),
    • Contract ANR-20-CE30-0032
    • within CE30 (Physique de la matière condensée et de la matière diluée)

This project aims at exploring novel semiconductor nanostructures hosting indirect excitons (IXs) and emerging collective states that IXs may form. We target IX fluids in two types of materials : GaN and Transition Metal Dichalcogenides (TMD). The dipole moment of IXs in these materials can be engineered on an atomic scale, whereas their large binding energy allows for relatively high quantum degeneracy temperature. This enriches the collective phase diagram, as compared to atomic systems and GaAs. IX with tunable dipole moments, adjustable light-matter coupling and transport properties can be engineered with various types of TMDs and in combination with GaN. The consortium represents critical mass of the human potential, expertise in indirect exciton physics, nitrides and TMDs, as well as growth, fabrication and spectroscopy facilities required to be internationally leading and attain the main goal of the project : uncover collective phases by controlling novel IXs species.


News

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Publications

Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures
Chiaruttini F., Guillet T., Brimont C., Scalbert D., Cronenberger S., Jouault B., Lefebvre P., Damilano B., (...)

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